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Stmicroelectronics Stb4Nk60Zt4

About The 76ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.MOSFET, N CH, 600V, 4A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1

MOSFET, N CH, 600V, 4A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.76ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:70W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:4A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Semiconductors - Discretes

Stmicroelectronics Stb4Nk60Zt4

Semiconductors - Discretes

Specifications of Stmicroelectronics Stb4Nk60Zt4

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Stmicroelectronics Stb4Nk60Zt4
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MOSFET, N CH, 75V, 75A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:37.5A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No.

MOSFET, N CH, 75V, 75A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:37.5A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No.

5V; Voltage Vgs Rds on Measurement:10V.Stmicroelectronics Stb75Nf75Lt4 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:75A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:75V; Voltage Vgs Max:2.

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    • MOSFET, N CH, 200V, 75A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:190W; Transistor Case Style:TO-263; No.

    MOSFET, N CH, 200V, 75A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:190W; Transistor Case Style:TO-263; No.

    Stmicroelectronics Stb75Nf20 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:75A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

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    • MOSFET, N CH, 900V, 5.8A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.56ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:140W; Transistor Case Style:TO-263; No.

    MOSFET, N CH, 900V, 5.8A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.56ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:140W; Transistor Case Style:TO-263; No.

    Stmicroelectronics Stb6Nk90Zt4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:5.8A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

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    • MOSFET, N CH, 600V, 6A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:110W; Transistor Case Style:TO-263; No.

    MOSFET, N CH, 600V, 6A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:110W; Transistor Case Style:TO-263; No.

    Stmicroelectronics Stb6Nk60Zt4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:6A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

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    • MOSFET, N CH, 60V, 50A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:27.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:110W; Transistor Case Style:TO-263; No.

    MOSFET, N CH, 60V, 50A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:27.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:110W; Transistor Case Style:TO-263; No.

    Stmicroelectronics Stb55Nf06T4 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:50A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

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    • MOSFET, N CH, 60V, 55A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:16V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:95W; Transistor Case Style:TO-263; No.

    MOSFET, N CH, 60V, 55A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:16V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:95W; Transistor Case Style:TO-263; No.

    Stmicroelectronics Stb55Nf06Lt4 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:55A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:1.

  • Eletrônicos
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    • MOSFET, N CH, 600V, 4A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.76ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:70W; Transistor Case Style:TO-263; No.

    MOSFET, N CH, 600V, 4A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.76ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:70W; Transistor Case Style:TO-263; No.

    Stmicroelectronics Stb4Nk60Zt4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:4A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

  • Eletrônicos
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    • MOSFET, N CH, 900V, 5.8A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.56ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:140W; Transistor Case Style:TO-263; No.

    MOSFET, N CH, 900V, 5.8A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.56ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:140W; Transistor Case Style:TO-263; No.

    8A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.Stmicroelectronics Stb6Nk90Zt4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:5.

  • Eletrônicos
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  • STMICROELECTRONICS
    • MOSFET, N CH, 600V, 4A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.76ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:70W; Transistor Case Style:TO-263; No.

    MOSFET, N CH, 600V, 4A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.76ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:70W; Transistor Case Style:TO-263; No.

    Stmicroelectronics Stb4Nk60Zt4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:4A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • STMICROELECTRONICS
    • MOSFET, N CH, 900V, 5.8A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.56ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:140W; Transistor Case Style:TO-263; No.

    MOSFET, N CH, 900V, 5.8A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.56ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:140W; Transistor Case Style:TO-263; No.

    8A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.Stmicroelectronics Stb6Nk90Zt4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:5.

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