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Stmicroelectronics Std35Nf06Lt4

About The 5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.MOSFET, N CH, 60V, 35A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17

MOSFET, N CH, 60V, 35A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:80W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:35A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V

Semiconductors - Discretes

Stmicroelectronics Std35Nf06Lt4

Semiconductors - Discretes

Specifications of Stmicroelectronics Std35Nf06Lt4

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Stmicroelectronics Std35Nf06Lt4
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Rating :- 8.06 /10
Votes :- 53
MOSFET, N CH, 800V, 1A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:800V; On Resistance Rds(on):13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:45W; Transistor Case Style:TO-252; No.

MOSFET, N CH, 800V, 1A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:800V; On Resistance Rds(on):13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:45W; Transistor Case Style:TO-252; No.

75V; Voltage Vgs Rds on Measurement:10V.Stmicroelectronics Std1Nk80Zt4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:1A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:3.

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    • MOSFET, N CH, 600V, 1A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:30W; Transistor Case Style:TO-252; No.

    MOSFET, N CH, 600V, 1A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:30W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std1Nk60T4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:1A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

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    • MOSFET, N CH, 600V, 7A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:125W; Transistor Case Style:TO-263; No.

    MOSFET, N CH, 600V, 7A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:125W; Transistor Case Style:TO-263; No.

    Stmicroelectronics Stb9Nk60Zt4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:7A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

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  • STMICROELECTRONICS
    • MOSFET, N CH, 800V, 5.2A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:125W; Transistor Case Style:TO-263; No.

    MOSFET, N CH, 800V, 5.2A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:125W; Transistor Case Style:TO-263; No.

    2A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.Stmicroelectronics Stb7Nk80Zt4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:5.

  • Eletrônicos
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  • STMICROELECTRONICS
    • MOSFET, N CH, 800V, 5.2A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:125W; Transistor Case Style:TO-263; No.

    MOSFET, N CH, 800V, 5.2A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:125W; Transistor Case Style:TO-263; No.

    Stmicroelectronics Stb7Nk80Zt4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:5.

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