Name: STMICROELECTRONICS? MOSFET, N CH, 900V, 3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:900V; On Resistance Rds(on):4.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:90W; Transistor Case Style:TO-252; No.
Brand: STMICROELECTRONICS
SKU: CAJF-120695
Price: 3.11 EUR
Availability: InStock

MOSFET, N CH, 800V, 3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:80W; Transistor Case Style:TO-252; No.

Stmicroelectronics Std4Nk80Zt4 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:3A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

STMICROELECTRONICS

MOSFET, N CH, 900V, 3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:900V; On Resistance Rds(on):4.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:90W; Transistor Case Style:TO-252; No.

Stmicroelectronics Std3Nk90Zt4 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:3A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

STMICROELECTRONICS

MOSFET, N CH, 800V, 2.5A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

Stmicroelectronics Std3Nk80Zt4 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:2.5A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

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Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

STMICROELECTRONICS

MOSFET, N CH, 60V, 35A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:80W; Transistor Case Style:TO-252; No.

Stmicroelectronics Std35Nf06Lt4 of Pins:3Pins; Operating Temperature Max:175Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:35A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +175Â°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

STMICROELECTRONICS

MOSFET, N CH, 200V, 5A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.65ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:33W; Transistor Case Style:TO-252; No.

Stmicroelectronics Std5N20Lt4 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:5A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:5V.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

STMICROELECTRONICS

MOSFET, N CH, 800V, 3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:80W; Transistor Case Style:TO-252; No.

Stmicroelectronics Std4Nk80Zt4 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:3A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

STMICROELECTRONICS

MOSFET, N CH, 900V, 3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:900V; On Resistance Rds(on):4.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:90W; Transistor Case Style:TO-252; No.

Stmicroelectronics Std3Nk90Zt4 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:3A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

STMICROELECTRONICS

MOSFET, N CH, 800V, 2.5A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

5A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.Stmicroelectronics Std3Nk80Zt4 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:2.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

STMICROELECTRONICS

MOSFET, N CH, 900V, 3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:900V; On Resistance Rds(on):4.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:90W; Transistor Case Style:TO-252; No.

Stmicroelectronics Std3Nk90Zt4 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:3A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

STMICROELECTRONICS

MOSFET, N CH, 800V, 2.5A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

Stmicroelectronics Std3Nk80Zt4 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:2.5A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

STMICROELECTRONICS

Specifications of Stmicroelectronics Std3Nk90Zt4
Category	Eletrônicos > Componentes e placas de circuitos > Semicondutores
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Stmicroelectronics Std3Nk90Zt4

About The 1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:90W; Transistor Case Style:TO-252; No

Semiconductors - Discretes

Specifications of Stmicroelectronics Std3Nk90Zt4

MOSFET, N CH, 800V, 3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:80W; Transistor Case Style:TO-252; No.

MOSFET, N CH, 900V, 3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:900V; On Resistance Rds(on):4.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:90W; Transistor Case Style:TO-252; No.

MOSFET, N CH, 800V, 2.5A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

MOSFET, N CH, 60V, 35A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:80W; Transistor Case Style:TO-252; No.

MOSFET, N CH, 200V, 5A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.65ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:33W; Transistor Case Style:TO-252; No.

MOSFET, N CH, 800V, 3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:80W; Transistor Case Style:TO-252; No.

MOSFET, N CH, 900V, 3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:900V; On Resistance Rds(on):4.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:90W; Transistor Case Style:TO-252; No.

MOSFET, N CH, 800V, 2.5A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

MOSFET, N CH, 900V, 3A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:900V; On Resistance Rds(on):4.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:90W; Transistor Case Style:TO-252; No.

MOSFET, N CH, 800V, 2.5A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.