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Nexperia Bc817Ds,115

About The TRANSISTOR NPN 0.5A 45V SOT457; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:600mW; DC Collector Current:500mA; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-457; No

TRANSISTOR NPN 0.5A 45V SOT457; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:600mW; DC Collector Current:500mA; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-457; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):700mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:160; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:General Purpose

Semiconductors - Discretes

Nexperia Bc817Ds,115

Semiconductors - Discretes

Specifications of Nexperia Bc817Ds,115

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Nexperia Bc817Ds,115
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TRANSISTOR PNP 20V 1A SOT89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-20V; Transition Frequency ft:140MHz; Power Dissipation Pd:500mW; DC Collector Current:-1A; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-89; No.

TRANSISTOR PNP 20V 1A SOT89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-20V; Transition Frequency ft:140MHz; Power Dissipation Pd:500mW; DC Collector Current:-1A; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-89; No.

Nexperia Bc869-25,115 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-500mV; Current Ic Continuous a Max:-1A; Gain Bandwidth ft Typ:140MHz; Hfe Min:160; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:General Purpose.

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    • TRANSISTOR NPN 20V 1A SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency ft:170MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-89; No.

    TRANSISTOR NPN 20V 1A SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency ft:170MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-89; No.

    Nexperia Bc868-25,115 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):500mV; Current Ic Continuous a Max:1A; Gain Bandwidth ft Typ:170MHz; Hfe Min:160; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:General Purpose.

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    • TRANSISTOR PNP 30V 0.1A SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR PNP 30V 0.1A SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220hFE; Transistor Case Style:SOT-23; No.

    Nexperia Bc859B,215 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-300mV; Current Ic Continuous a Max:-10mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:220; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:General Purpose.

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  • NEXPERIA
    • TRANSISTOR PNP 65V 0.1A SOT323; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:100MHz; Power Dissipation Pd:200mW; DC Collector Current:-100mA; DC Current Gain hFE:220hFE; Transistor Case Style:SOT-323; No.

    TRANSISTOR PNP 65V 0.1A SOT323; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:100MHz; Power Dissipation Pd:200mW; DC Collector Current:-100mA; DC Current Gain hFE:220hFE; Transistor Case Style:SOT-323; No.

    Nexperia Bc856Bw,115 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-300mV; Current Ic Continuous a Max:-10mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:220; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:General Purpose.

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  • NEXPERIA
    • TRANSISTOR PNP 0.5A 45V SOT457; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Power Dissipation Pd:600mW; DC Collector Current:-500mA; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-457; No.

    TRANSISTOR PNP 0.5A 45V SOT457; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Power Dissipation Pd:600mW; DC Collector Current:-500mA; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-457; No.

    Nexperia Bc807Ds,115 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):-700mV; Current Ic Continuous a Max:-500mA; Gain Bandwidth ft Typ:80MHz; Hfe Min:160; Module Configuration:Dual; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Transistor Type:General Purpose; Transition Frequency ft:80MHz.

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    • TRIAC 600V 1A SOT-223; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current IT(rms):1A; Triac Case Style:SOT-223; Gate Trigger Current Max (QI), Igt:5mA; Gate Trigger Voltage Max Vgt:1.3V; Peak Gate Power:2W; Peak Non Rep Surge Current Itsm 50Hz:8.5A; Holding Current Max Ih:10mA; No.

    TRIAC 600V 1A SOT-223; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current IT(rms):1A; Triac Case Style:SOT-223; Gate Trigger Current Max (QI), Igt:5mA; Gate Trigger Voltage Max Vgt:1.3V; Peak Gate Power:2W; Peak Non Rep Surge Current Itsm 50Hz:8.5A; Holding Current Max Ih:10mA; No.

    Ween Semiconductors Z0107Mn,135 of Pins:3Pins; Operating Temperature Max:125°C; Product Range:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Gate Trigger Current Igt (Q1) t2+g+:5mA; Gate Trigger Current Max, Igt:5mA; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +125°C; Termination Type:Surface Mount Device; Thyristor Case:SOT-223; Thyristor Type:Triac.

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  • WEEN SEMICONDUCTORS
    • TRANSISTOR NPN 0.5A 45V SOT457; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:600mW; DC Collector Current:500mA; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-457; No.

    TRANSISTOR NPN 0.5A 45V SOT457; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:600mW; DC Collector Current:500mA; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-457; No.

    Nexperia Bc817Ds,115 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):700mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:160; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:General Purpose.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • TRANSISTOR PNP 0.5A 45V SOT457; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Power Dissipation Pd:600mW; DC Collector Current:-500mA; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-457; No.

    TRANSISTOR PNP 0.5A 45V SOT457; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Power Dissipation Pd:600mW; DC Collector Current:-500mA; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-457; No.

    Nexperia Bc807Ds,115 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):-700mV; Current Ic Continuous a Max:-500mA; Gain Bandwidth ft Typ:80MHz; Hfe Min:160; Module Configuration:Dual; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Transistor Type:General Purpose; Transition Frequency ft:80MHz.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • TRANSISTOR NPN 0.5A 45V SOT457; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:600mW; DC Collector Current:500mA; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-457; No.

    TRANSISTOR NPN 0.5A 45V SOT457; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:600mW; DC Collector Current:500mA; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-457; No.

    Nexperia Bc817Ds,115 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):700mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:160; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:General Purpose.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • TRANSISTOR PNP 0.5A 45V SOT457; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Power Dissipation Pd:600mW; DC Collector Current:-500mA; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-457; No.

    TRANSISTOR PNP 0.5A 45V SOT457; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Power Dissipation Pd:600mW; DC Collector Current:-500mA; DC Current Gain hFE:160hFE; Transistor Case Style:SOT-457; No.

    Nexperia Bc807Ds,115 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):-700mV; Current Ic Continuous a Max:-500mA; Gain Bandwidth ft Typ:80MHz; Hfe Min:160; Module Configuration:Dual; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Transistor Type:General Purpose; Transition Frequency ft:80MHz.

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  • NEXPERIA