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Onsemi Qse113

About The 5mA; External Depth:2.54mm; External Length / Height:5

INFRARED PHOTOTRANSISTOR, NPN, 880NM,; Wavelength Typ:880nm; Viewing Angle:25°; Power Consumption:100mW; No. of Pins:2Pins; Transistor Case Style:Side Looking; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Angle of Half Sensitivity ±:25°; Current Ic Typ:1.5mA; External Depth:2.54mm; External Length / Height:5.08mm; External Width:4.44mm; Fall Time tf:8µs; Lead Length:12.7mm; Operating Temperature Max:100°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +100°C; Peak Spectral Response Wavelength:880nm; Peak Wavelength:880nm; Rise Time:8µs; Storage Temperature Max:100°C; Storage Temperature Min:-40°C; Transistor Polarity:NPN; Transistor Type:Photo; Voltage Vcc:5V

Optoelectronics & Displays

Onsemi Qse113

Optoelectronics & Displays

Specifications of Onsemi Qse113

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Onsemi Qse113
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