IGBT,1200V,20A,TO-220AB; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:180W; Transistor Type:IGBT
Semiconductors - Discretes
Ixys Semiconductor Ixgp20N120A3
Specifications of Ixys Semiconductor Ixgp20N120A3 | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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