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VISHAY

Vishay Sis434Dn-T1-Ge3

About The 8W; Transistor Case Style:PowerPAK 1212; No.2V; Power Dissipation Pd:3

of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Current Id Max:17.6A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:20V MOSFET,N CH,40V,35A,POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:3.8W; Transistor Case Style:PowerPAK 1212; No.

Semiconductors - Discretes

Vishay Sis434Dn-T1-Ge3

ADAPTADOR BLUEETOOTH, USB, 2.4GHZ, EDR; Versión de Bluetooth:Bluetooth 2.0 + EDR; Tensión de Alimentación Mín.:-; Tensión de Alimentación Máx.:3.3V; Rango de Señal Máx.:300m; Velocidad de Datos:3Mbps; Clase de Bluetooth:Clase 1; Sensibilidad de Recepción:-84dB; Temperatura de Trabajo Mín.:-40°C; Temperatura de Funcionamiento Máx.:85°C; Rango de Producto:-; Rango de Señal de Recepción:300m; Rango de Temperatura de Funcionamiento:-40°C a +85°C
MOSFET,N CH,30V,24A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No.
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Semiconductors - Discretes

Specifications of Vishay Sis434Dn-T1-Ge3

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Vishay Sis434Dn-T1-Ge3
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Rating :- 8.18 /10
Votes :- 52
MOSFET,N CH,30V,20A,POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:2.3W; Transistor Case Style:Power 33; No.

MOSFET,N CH,30V,20A,POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:2.3W; Transistor Case Style:Power 33; No.

Onsemi Fdmc7660 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Current Id Max:20A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:20V.

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  • ONSEMI
    • MOSFET,P CH,20V,26.6A,8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-26.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.5V; Power Dissipation Pd:3W; Transistor Case Style:SOIC; No.

    MOSFET,P CH,20V,26.6A,8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-26.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.5V; Power Dissipation Pd:3W; Transistor Case Style:SOIC; No.

    Vishay Si4477Dy-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Id Max:-18A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:-12V.

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  • Componentes e placas de circuitos
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  • VISHAY
    • MOSFET,N CH,40V,35A,POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:3.8W; Transistor Case Style:PowerPAK 1212; No.

    MOSFET,N CH,40V,35A,POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:3.8W; Transistor Case Style:PowerPAK 1212; No.

    Vishay Sis434Dn-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Current Id Max:17.6A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:20V.

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    • PANEL MOUNT INDICATOR, LED, 10.1MM, GREEN, 1.9V; LED Color:Green; Operating Voltage:1.9VDC; Mounting Hole Dia:10.1mm; Forward Current If:20mA; Luminous Intensity:485mcd; IP / NEMA Rating:NEMA 4; Product Range:CNX 480 Series
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  • VCC (VISUAL COMMUNICATIONS COMPANY)
    • MOSFET,N CH,30V,20A,POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:2.3W; Transistor Case Style:Power 33; No.

    MOSFET,N CH,30V,20A,POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:2.3W; Transistor Case Style:Power 33; No.

    Onsemi Fdmc7660 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Current Id Max:20A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:20V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET,P CH,20V,26.6A,8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-26.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.5V; Power Dissipation Pd:3W; Transistor Case Style:SOIC; No.

    MOSFET,P CH,20V,26.6A,8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-26.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.5V; Power Dissipation Pd:3W; Transistor Case Style:SOIC; No.

    Vishay Si4477Dy-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Id Max:-18A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:-12V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • VISHAY
    • MOSFET,N CH,30V,24A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No.

    MOSFET,N CH,30V,24A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No.

    Vishay Si4156Dy-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Id Max:15.7A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:20V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET,N CH,40V,35A,POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:3.8W; Transistor Case Style:PowerPAK 1212; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET,N CH,30V,24A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No.

    MOSFET,N CH,30V,24A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No.

    Vishay Si4156Dy-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Id Max:15.7A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:20V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET,N CH,40V,35A,POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:3.8W; Transistor Case Style:PowerPAK 1212; No.

    MOSFET,N CH,40V,35A,POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:3.8W; Transistor Case Style:PowerPAK 1212; No.

    6A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:20V.Vishay Sis434Dn-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Current Id Max:17.

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