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GE

Ge A28F5603S

About The 5UF, 10%, 2KV; Dielectric Type:Film / Foil PP; Capacitor Case / Package:Can; Capacitance:0.5µF; Capacitance Tolerance:± 10%; Typical Applications:Snubber; Capacitor Mounting:Panel 74R9397

SNUBBER CAPACITOR, 0.5UF, 10%, 2KV; Dielectric Type:Film / Foil PP; Capacitor Case / Package:Can; Capacitance:0.5µF; Capacitance Tolerance:± 10%; Typical Applications:Snubber; Capacitor Mounting:Panel 74R9397

Passive Components

Ge A28F5603S

Passive Components

Specifications of Ge A28F5603S

CategoryEletrônicos > Componentes e placas de circuitos > Componentes de circuito passivo > Capacitadores
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Ge A28F5603S
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Rating :- 8.1 /10
Votes :- 52
MOSFET,N CH,60V,0.3A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:190mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No.

MOSFET,N CH,60V,0.3A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:190mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No.

Vishay 2N7002K-T1-Ge3 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Current Id Max:300mA; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:20V.

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  • VISHAY
    • MOSFET,N CH,20V,6A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0265ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:450mV; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No.

    MOSFET,N CH,20V,6A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0265ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:450mV; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No.

    Vishay Si2312Cds-T1-Ge3 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Current Id Max:5A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:8V.

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  • VISHAY
    • MOSFET,N CH,30V,3.6A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:1.1W; Transistor Case Style:TO-236; No.

    MOSFET,N CH,30V,3.6A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:1.1W; Transistor Case Style:TO-236; No.

    Vishay Si2304Dds-T1-Ge3 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Current Id Max:3.3A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:20V.

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  • VISHAY
    • MOSFET,P CH,30V,2.7A,DIODE,SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.158ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:2.3W; Transistor Case Style:SOT-23; No.

    MOSFET,P CH,30V,2.7A,DIODE,SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.158ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:2.3W; Transistor Case Style:SOT-23; No.

    9A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:-20V.Vishay Si2303Cds-T1-Ge3 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Id Max:-1.

  • Eletrônicos
  • Componentes e placas de circuitos
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  • VISHAY
    • MOSFET,P CH,30V,2.7A,DIODE,SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.158ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:2.3W; Transistor Case Style:SOT-23; No.

    MOSFET,P CH,30V,2.7A,DIODE,SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.158ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:2.3W; Transistor Case Style:SOT-23; No.

    Vishay Si2303Cds-T1-Ge3 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Id Max:-1.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY