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VISHAY

Vishay Sum45N25-58-E3

About The MOSFET,N CH,W DIODE,250V,45A,D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:375W; Transistor Case Style:TO-263; No

MOSFET,N CH,W DIODE,250V,45A,D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:375W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:10V

Semiconductors - Discretes

Vishay Sum45N25-58-E3

Semiconductors - Discretes

Specifications of Vishay Sum45N25-58-E3

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Vishay Sum45N25-58-E3
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DPM, DC AMMETER, 20A, 5-40VDC, POWER; No.

DPM, DC AMMETER, 20A, 5-40VDC, POWER; No.

4mm; Panel Cutout Height:21.29mm; Panel Cutout Width:33.99A; Digit Height:9.

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  • MURATA POWER SOLUTIONS
    • MOSFET,N CH,W DIODE,60V,24A,POPAK8L; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:45W; Transistor Case Style:PowerPAK SO; No.

    MOSFET,N CH,W DIODE,60V,24A,POPAK8L; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:45W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sqj850Ep-T1_Ge3 of Pins:8Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V.

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    • MOSFET,N CH,W DIODE,55V,30A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:-; Transistor Case Style:TO-252; No.

    MOSFET,N CH,W DIODE,55V,30A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:-; Transistor Case Style:TO-252; No.

    Vishay Sqd30N05-20L_Ge3 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:5V.

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    • MOSFET,N CH,W DIODE,500V,14A,TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:190W; Transistor Case Style:TO-247AC; No.

    MOSFET,N CH,W DIODE,500V,14A,TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:190W; Transistor Case Style:TO-247AC; No.

    65°C/W; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:56A; Termination Type:Through Hole; Voltage Vds:500V; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V.Vishay Irfp450Apbf of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Current Id Max:14A; Device Marking:IRFP450A; Junction to Case Thermal Resistance A:0.

  • Eletrônicos
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  • VISHAY
    • MOSFET,N CH,W DIODE,500V,14A,TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:190W; Transistor Case Style:TO-247AC; No.

    MOSFET,N CH,W DIODE,500V,14A,TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:190W; Transistor Case Style:TO-247AC; No.

    65°C/W; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:56A; Termination Type:Through Hole; Voltage Vds:500V; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V.Vishay Irfp450Apbf of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Current Id Max:14A; Device Marking:IRFP450A; Junction to Case Thermal Resistance A:0.

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