MOSFET,N CH,W DIO,500V,18A,TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.225ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:223W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Semiconductors - Discretes
Vishay Sihp18N50C-E3
Specifications of Vishay Sihp18N50C-E3 | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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