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VISHAY

Vishay Sqd30N05-20L_Ge3

About The MOSFET,N CH,W DIODE,55V,30A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:5V

MOSFET,N CH,W DIODE,55V,30A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:-; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:5V

Semiconductors - Discretes

Vishay Sqd30N05-20L_Ge3

Semiconductors - Discretes

Specifications of Vishay Sqd30N05-20L_Ge3

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Vishay Sqd30N05-20L_Ge3
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Votes :- 51
SRAM, 512K X 8, 3V, 55NS, 32STSOP1; Memory Size:4Mbit; SRAM Memory Configuration:512K x 8bit; Supply Voltage Range:2.5V to 3.6V; Memory Case Style:TSOP-I; No.

SRAM, 512K X 8, 3V, 55NS, 32STSOP1; Memory Size:4Mbit; SRAM Memory Configuration:512K x 8bit; Supply Voltage Range:2.5V to 3.6V; Memory Case Style:TSOP-I; No.

5V.Integrated Silicon Solution (Issi) Is62Wv5128Bll-55Hli of Pins:32Pins; Access Time:55ns; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:-; Automotive Qualification Standard:-; RoHS Phthalates Compliant:Yes; MSL:MSL 5 - 48 hours; SVHC:No SVHC (12-Jan-2017); Operating Temperature Range:-40°C to +85°C; Supply Voltage Max:3.6V; Supply Voltage Min:2.

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  • INTEGRATED SILICON SOLUTION (ISSI)
    • SRAM, 512K X 16, 3V, 55NS, 44TSOP2; Memory Size:8Mbit; SRAM Memory Configuration:512K x 16bit; Supply Voltage Range:2.5V to 3.6V; Memory Case Style:TSOP-II; No.

    SRAM, 512K X 16, 3V, 55NS, 44TSOP2; Memory Size:8Mbit; SRAM Memory Configuration:512K x 16bit; Supply Voltage Range:2.5V to 3.6V; Memory Case Style:TSOP-II; No.

    Integrated Silicon Solution (Issi) Is62Wv51216Bll-55Tli of Pins:44Pins; Access Time:55ns; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:IS62WV51216ALL/ IS62WV51216BLL; Automotive Qualification Standard:-; RoHS Phthalates Compliant:Yes; MSL:MSL 5 - 48 hours; SVHC:No SVHC (12-Jan-2017); Operating Temperature Range:-40°C to +85°C; Supply Voltage Max:3.6V; Supply Voltage Min:2.5V.

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  • INTEGRATED SILICON SOLUTION (ISSI)
    • DISPENSER, ATG 700, FOR 3M 924 TAPE; Dispenser Type:Cartridge; Length:55m; Product Range:ATG Series; SVHC:No SVHC (15-Jan-2018)
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  • 3M
    • DPM, AC POWER, 32A, POWER FACTOR; No.

    DPM, AC POWER, 32A, POWER FACTOR; No.

    14mm; Panel Cutout Height:22.Murata Power Solutions Acm20-5-Ac1-R-C of Digits / Alpha:4; Meter Function:AC Current / AC Voltage / Power / Power Factor; Meter Range:0A to 32A, 85V to 264V, 0W to 9999W; Digit Height:9.22mm; Supply Voltage Min:85VAC; Supply Voltage Max:264VAC; Operating Temperature Min:0°C; Operating Temperature Max:60°C; Product Range:ACM20 Series; SVHC:No SVHC (07-Jul-2017); Input Current Range:0A to 32A; Operating Temperature Range:0°C to +60°C; Power Consumption:250mW; Supply Voltage Range:85V AC to 264V AC.1mm; Panel Cutout Width:36.

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  • MURATA POWER SOLUTIONS
    • DPM, AC POWER, 100A, POWER FACTOR; No.

    DPM, AC POWER, 100A, POWER FACTOR; No.

    14mm; Panel Cutout Height:22.

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  • Automation & Process Control
  • MURATA POWER SOLUTIONS
    • DPM, DC AMMETER, 20A, 5-40VDC, POWER; No.

    DPM, DC AMMETER, 20A, 5-40VDC, POWER; No.

    29mm; Panel Cutout Width:33.Murata Power Solutions Dca-20Pc-6-Dc1-Rl-C of Digits / Alpha:3-1/2; Meter Function:DC Current; Meter Range:0A to 19.4mm; Panel Cutout Height:21.93mm; Supply Voltage Min:5VDC; Supply Voltage Max:40VDC; Operating Temperature Min:0°C; Operating Temperature Max:60°C; Product Range:-; SVHC:No SVHC (07-Jul-2017); Operating Temperature Range:0°C to +60°C; Power Consumption:75mW; Supply Voltage Range:5V DC to 40V DC.

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  • Automation & Process Control
  • MURATA POWER SOLUTIONS
    • MOSFET,N CH,W DIODE,60V,24A,POPAK8L; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:45W; Transistor Case Style:PowerPAK SO; No.

    MOSFET,N CH,W DIODE,60V,24A,POPAK8L; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:45W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sqj850Ep-T1_Ge3 of Pins:8Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET,N CH,W DIODE,55V,30A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:-; Transistor Case Style:TO-252; No.

    MOSFET,N CH,W DIODE,55V,30A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:-; Transistor Case Style:TO-252; No.

    Vishay Sqd30N05-20L_Ge3 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:5V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET,N CH,W DIODE,60V,24A,POPAK8L; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:45W; Transistor Case Style:PowerPAK SO; No.

    MOSFET,N CH,W DIODE,60V,24A,POPAK8L; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:45W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sqj850Ep-T1_Ge3 of Pins:8Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET,N CH,W DIODE,55V,30A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:-; Transistor Case Style:TO-252; No.

    MOSFET,N CH,W DIODE,55V,30A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:-; Transistor Case Style:TO-252; No.

    Vishay Sqd30N05-20L_Ge3 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:5V.

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