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Vishay Sqj850Ep-T1_Ge3

About The MOSFET,N CH,W DIODE,60V,24A,POPAK8L; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:45W; Transistor Case Style:PowerPAK SO; No

MOSFET,N CH,W DIODE,60V,24A,POPAK8L; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:45W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V

Semiconductors - Discretes

Vishay Sqj850Ep-T1_Ge3

Semiconductors - Discretes

Specifications of Vishay Sqj850Ep-T1_Ge3

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Vishay Sqj850Ep-T1_Ge3
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