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ONSEMI

Onsemi Fgaf40N60Uftu

About The of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:100W; Transistor Type:IGBT.IGBT,N CH,FAST W/DIO,600V,40A,TO-3PF; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-3PF; No

IGBT,N CH,FAST W/DIO,600V,40A,TO-3PF; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-3PF; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:100W; Transistor Type:IGBT

Semiconductors - Discretes

Onsemi Fgaf40N60Uftu

Semiconductors - Discretes

Specifications of Onsemi Fgaf40N60Uftu

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Onsemi Fgaf40N60Uftu
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Rating :- 8.18 /10
Votes :- 51
MOSFET,N CH,30V,36A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):800µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Dissipation Pd:104W; Transistor Case Style:Power 56; No.

MOSFET,N CH,30V,36A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):800µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Dissipation Pd:104W; Transistor Case Style:Power 56; No.

Onsemi Fdms7650 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

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    • MOSFET,N CH,20V,5.7A,MICROFET2X2; Transistor Polarity:N Channel; Continuous Drain Current Id:5.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0168ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:830mV; Power Dissipation Pd:2.4W; Transistor Case Style:µFET; No.

    MOSFET,N CH,20V,5.7A,MICROFET2X2; Transistor Polarity:N Channel; Continuous Drain Current Id:5.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0168ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:830mV; Power Dissipation Pd:2.4W; Transistor Case Style:µFET; No.

    Onsemi Fdma420Nz of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

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    • MOSFET,N CH,100V,12.4A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.9V; Power Dissipation Pd:104W; Transistor Case Style:Power 56; No.

    MOSFET,N CH,100V,12.4A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.9V; Power Dissipation Pd:104W; Transistor Case Style:Power 56; No.

    Onsemi Fdms86101 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

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    • IGBT,N CH,FAST,W/DIO,600V,80A,TO247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:600V; ; Available until stocks are exhausted
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • IGBT,N CH,FAST,W/DIO,600V,80A,TO247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:600V; ; Available until stocks are exhausted
  • Eletrônicos
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  • ONSEMI