Vishay Si7461Dp-T1-Ge3
About The .6A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0
of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Id Max:8.6A; Current Temperature:25°C; Device Marking:SI7461DP; External Depth:5.15mm; External Length / Height:1.07mm; External Width:6.15mm; Fall Time tf:90ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1°C/W; On State Resistance Max:15mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; P Channel Gate Charge:121nC; Pulse Current Idm:60A; Rise Time:20ns; Termination Type:Surface Mount Device; Turn Off Time:205ns; Turn On Time:20ns MOSFET, P, POWERPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:8.6A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.0115ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:1.9W; Transistor Case Style:PowerPAK SO; No.
Semiconductors - Discretes
Vishay Si7461Dp-T1-Ge3
Semiconductors - Discretes
Specifications of Vishay Si7461Dp-T1-Ge3 | |
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| Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
| Instock | instock |
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