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VISHAY

Vishay Irl640Spbf

About The 18ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power Dissipation Pd:125W; Transistor Case Style:TO-263; No.MOSFET, N, 200V, 17A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0

of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:580mJ; Capacitance Ciss Typ:1800pF; Current Iar:10A; Current Id Max:17A; Current Idss Max:25µA; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.16mm; Fall Time tf:52ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1°C/W; N-channel Gate Charge:66nC; No. PCB:3.1W; Pulse Current Idm:68A; Reverse Recovery Time trr Typ:56ns MOSFET, N, 200V, 17A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power Dissipation Pd:125W; Transistor Case Style:TO-263; No. of Transistors:1; Operating Temperature Min:-55°C; Power Dissipation on 1" Sq.

Semiconductors - Discretes

Vishay Irl640Spbf

Semiconductors - Discretes

Specifications of Vishay Irl640Spbf

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Vishay Irl640Spbf
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