Nexperia Pbss4140Dpn,115
About The TRANSISTOR, SOT-457; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:370mW; DC Collector Current:-1A; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-457; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):250V; Continuous Collector Current Ic Max:1A; Current Ic @ Vce Sat:50mA; Current Ic Continuous a Max:1A; Current Ic hFE:500mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:150MHz; Hfe Min:300; Module Configuration:Dual; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:750mW; Power Dissipation per device Max:750mW; SMD Marking:M2; Voltage Vcbo:40V
TRANSISTOR, SOT-457; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:370mW; DC Collector Current:-1A; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-457; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):250V; Continuous Collector Current Ic Max:1A; Current Ic @ Vce Sat:50mA; Current Ic Continuous a Max:1A; Current Ic hFE:500mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:150MHz; Hfe Min:300; Module Configuration:Dual; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:750mW; Power Dissipation per device Max:750mW; SMD Marking:M2; Voltage Vcbo:40V
Semiconductors - Discretes
Nexperia Pbss4140Dpn,115
Semiconductors - Discretes
Specifications of Nexperia Pbss4140Dpn,115 | |
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| Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
| Instock | instock |
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