MOSFET, N, 100V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:96A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissipation Pd:250W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:220mJ; Capacitance Ciss Typ:5150pF; Current Id Max:88A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:10mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Ptot Max:250W; Pulse Current Idm:380A; Reverse Recovery Time trr Typ:38ns; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Semiconductors - Discretes
Infineon Irfb4410Pbf
Specifications of Infineon Irfb4410Pbf | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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