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IXYS SEMICONDUCTOR

Ixys Semiconductor Dsei2X31-06C

About The 6V/600V; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):30A; Forward Voltage VF Max:1.DIODE MOD, DUAL ISOLATED, 30A/1

DIODE MOD, DUAL ISOLATED, 30A/1.6V/600V; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):30A; Forward Voltage VF Max:1.6V; Diode Module Configuration:Dual Isolated; Product Range:DSEI2 Series; SVHC:No SV

Semiconductors - Discretes

Ixys Semiconductor Dsei2X31-06C

Semiconductors - Discretes

Specifications of Ixys Semiconductor Dsei2X31-06C

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Ixys Semiconductor Dsei2X31-06C
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RES, THIN FILM, 100R, 0.5%, 0.063W, 0402; Resistance:100ohm; Resistance Tolerance:± 0.5%; Power Rating:63mW; Resistor Case / Package:0402 ^1005 Metric]; Resistor Technology:Thin Film; Resistor Type:Pr 28K0308
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    • MOSFET, N CH, 500V, 24A, TO-247AD-3; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.23oh; Available until stocks are exhausted Alternative available
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    • of Phases:Three Phase; Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):63A; Bridge Rectifier Case Style:Module; Forward Voltage VF Max:1.8V; No.
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    • of Phases:Single Phase; No.

    of Phases:Single Phase; No.

    25V; Diode Module Configuration:Dual Isolated; Product Range:DSEI2 Series; SVHC:No SVHC (12-Jan-2017); Alternate Case Style:MINIBLOC; Current Ifsm:1.2kA; Diode Case Style:SOT-227B; Diode Configuration:Dual Independent; Diode Type:Fast Recovery; Forward Current If Max:100A; Forward Surge Current Ifsm Max:1.

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  • IXYS SEMICONDUCTOR
    • of Phases:Single Phase; No.

    of Phases:Single Phase; No.

    1V; Diode Module Configuration:Dual Isolated; Product Range:DSEI2 Series; SVHC:No SVHC (12-Jan-2017); Alternate Case Style:MINIBLOC; Current Ifsm:1. Ixys Semiconductor Dsei2X121-02A.2kA; Forward Voltage:950mV; Junction Temperature Tj Max:25°C; Module Configuration:Dual; No.of Pins:4Pins; Operating Temperature Max:150°C; Reverse Recovery Time trr Max:35ns; Reverse Recovery Time trr Typ:35ns DIODE, FAST, 2X123A; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):123A; Forward Voltage VF Max:1.

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  • IXYS SEMICONDUCTOR
    • DIODE MOD, DUAL ISOLATED, 30A/1.6V/600V; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):30A; Forward Voltage VF Max:1.6V; Diode Module Configuration:Dual Isolated; Product Range:DSEI2 Series; SVHC:No SV
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  • IXYS SEMICONDUCTOR
    • DIODE, FAST, 2X30A; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):30A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:1.6V; Reverse Recovery Time trr Max:35ns; Forward Surge Current If
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  • IXYS SEMICONDUCTOR
    • DIODE MOD, DUAL ISOLATED, 30A/1.6V/600V; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):30A; Forward Voltage VF Max:1.6V; Diode Module Configuration:Dual Isolated; Product Range:DSEI2 Series; SVHC:No SV
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  • IXYS SEMICONDUCTOR
    • DIODE, FAST, 2X30A; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):30A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:1.6V; Reverse Recovery Time trr Max:35ns; Forward Surge Current If
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  • IXYS SEMICONDUCTOR