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Nexperia Psmn1R7-30Yl,115

About The 00129ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:109W; Transistor Case Style:SOT-669; No

MOSFET, N CH 30V 100A SOT669; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00129ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:109W; Transistor Case Style:SOT-669; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Id Max:15A; On State Resistance Max:1.7mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Semiconductors - Discretes

Nexperia Psmn1R7-30Yl,115

More from NEXPERIA? MOSFET, N CH 30V 100A SOT669; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00129ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:109W; Transistor Case Style:SOT-669; No.
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Semiconductors - Discretes

Specifications of Nexperia Psmn1R7-30Yl,115

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Nexperia Psmn1R7-30Yl,115
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DIODE, SCHOTTKY RECTIFIER, 12A, 100V; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):12A; Diode Configuration:Single; Diode Case Style:TO-277A; No.

DIODE, SCHOTTKY RECTIFIER, 12A, 100V; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):12A; Diode Configuration:Single; Diode Case Style:TO-277A; No.

2mm; External Length / Height:6.75mm; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +150°C; Semiconductor Technology:Si; Termination Type:Surface Mount Device.Vishay V12P10-M3/86A of Pins:3Pins; Forward Voltage VF Max:640mV; Forward Surge Current Ifsm Max:200A; Operating Temperature Max:150°C; Product Range:V12P1 Series; Automotive Qualification Standard:-; SVHC:Lead (15-Jan-2019); Avalanche Single Pulse Energy Eas:100mJ; Current Ifsm:200A; Diode Type:Schottky; External Depth:1.

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  • VISHAY
    • of Pins:18Pins; No.

    of Pins:18Pins; No.

    5V; Termination Type:Surface Mount Device IC, I/O EXPANDER, 8BIT, SPI, 18SOIC; Chip Configuration:8bit; Bus Frequency:10MHz; IC Interface Type:SPI; Supply Voltage Min:1.8V; Supply Voltage Max:5.

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  • MICROCHIP
    • of Pins:18Pins; No.

    of Pins:18Pins; No.

    5V; Interface Case Style:DIP; No.5V; Termination Type:Through Hole IC, I/O EXPANDER, 8BIT, SPI, 18DIP; Chip Configuration:8bit; Bus Frequency:10MHz; IC Interface Type:SPI; Supply Voltage Min:1.8V; Supply Voltage Max:5.8V to 5.

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  • MICROCHIP
    • MOSFET, N CH 30V 65A SOT669; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00492ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:51W; Transistor Case Style:SOT-669; No.

    MOSFET, N CH 30V 65A SOT669; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00492ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:51W; Transistor Case Style:SOT-669; No.

    Nexperia Psmn7R0-30Yl,115 of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Id Max:65A; On State Resistance Max:7mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

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  • NEXPERIA
    • MOSFET, N CH 30V 65A SOT669; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00492ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:51W; Transistor Case Style:SOT-669; No.

    MOSFET, N CH 30V 65A SOT669; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00492ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:51W; Transistor Case Style:SOT-669; No.

    Nexperia Psmn7R0-30Yl,115 of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Id Max:65A; On State Resistance Max:7mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

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