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Stmicroelectronics Stp80Nf10

About The MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0. of Transistors:1; On State resistance @ Vgs = 10V:15mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pin Configuration:a; Power Dissipation Ptot Max:300W; Pulse Current Idm:320A; Reverse Recovery Time trr Typ:106ns; Voltage Vds Typ:100V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:200mJ; Capacitance Ciss Typ:5500pF; Current Id Max:80A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:15mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pin Configuration:a; Power Dissipation Ptot Max:300W; Pulse Current Idm:320A; Reverse Recovery Time trr Typ:106ns; Voltage Vds Typ:100V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

Semiconductors - Discretes

Stmicroelectronics Stp80Nf10

Semiconductors - Discretes

Specifications of Stmicroelectronics Stp80Nf10

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Stmicroelectronics Stp80Nf10
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