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Stmicroelectronics Stp30Nf10

About The of Transistors:1; On State resistance @ Vgs = 10V:45mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Power Dissipation Ptot Max:115W; Pulse Current Idm:140A; Reverse Recovery Time trr Typ:110ns; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V.

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:115W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:275mJ; Capacitance Ciss Typ:1180pF; Current Id Max:35A; Current Temperature:25°C; Device Marking:STP30NF10; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:45mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Power Dissipation Ptot Max:115W; Pulse Current Idm:140A; Reverse Recovery Time trr Typ:110ns; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

Semiconductors - Discretes

Stmicroelectronics Stp30Nf10

Semiconductors - Discretes

Specifications of Stmicroelectronics Stp30Nf10

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Stmicroelectronics Stp30Nf10
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