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AMP - TE CONNECTIVITY

Amp - Te Connectivity 91067-1

About The TOOLS INSERTION; For Use With:Amplimite HDP-20 Series Size 22 DM Contacts, 28-22AWG; Product Range:Amplimite HD Series; SVHC:No SVHC (15-Jan-2018); Wire Size (AWG):28AWG to 22AWG; Wire Size Range (AWG):28-22

TOOLS INSERTION; For Use With:Amplimite HDP-20 Series Size 22 DM Contacts, 28-22AWG; Product Range:Amplimite HD Series; SVHC:No SVHC (15-Jan-2018); Wire Size (AWG):28AWG to 22AWG; Wire Size Range (AWG):28-22

Tools & Production Supplies

Amp - Te Connectivity 91067-1

Tools & Production Supplies

Specifications of Amp - Te Connectivity 91067-1

CategoryEletrônicos
Instockinstock

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Amp - Te Connectivity 91067-1
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Rating :- 8.1 /10
Votes :- 50
TRANSISTOR BIPOLAR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency ft:4MHz; Power Dissipation Pd:200W; DC Collector Current:2A; DC Current Gain hFE:20hFE; Transistor Case Style:TO-247; No.

TRANSISTOR BIPOLAR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency ft:4MHz; Power Dissipation Pd:200W; DC Collector Current:2A; DC Current Gain hFE:20hFE; Transistor Case Style:TO-247; No.

Onsemi Mjw21194G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):250V; Current Ic Continuous a Max:16A; Gain Bandwidth ft Typ:4MHz; Hfe Min:20; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, BJT, PNP, -250V, -30A,TO-247; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-250V; Transition Frequency ft:4MHz; Power Dissipation Pd:200W; DC Collector Current:-30A; DC Current Gain hFE:20hFE; Transistor Case Style:TO-247; No.

    TRANSISTOR, BJT, PNP, -250V, -30A,TO-247; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-250V; Transition Frequency ft:4MHz; Power Dissipation Pd:200W; DC Collector Current:-30A; DC Current Gain hFE:20hFE; Transistor Case Style:TO-247; No.

    Onsemi Mjw21193G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):250V; Current Ic Continuous a Max:16A; Gain Bandwidth ft Typ:4MHz; Hfe Min:20; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • BIPOLAR, TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:450V; Transition Frequency ft:4MHz; Power Dissipation Pd:50W; DC Collector Current:2A; DC Current Gain hFE:4hFE; Transistor Case Style:TO-220; No.

    BIPOLAR, TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:450V; Transition Frequency ft:4MHz; Power Dissipation Pd:50W; DC Collector Current:2A; DC Current Gain hFE:4hFE; Transistor Case Style:TO-220; No.

    Onsemi Bux85G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):30V; Gain Bandwidth ft Typ:4MHz; Hfe Min:30; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • BIPOLAR, TRANSISTOR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:25MHz; Power Dissipation Pd:1.75W; DC Collector Current:2A; DC Current Gain hFE:12hFE; Transistor Case Style:TO-252; No.

    BIPOLAR, TRANSISTOR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:25MHz; Power Dissipation Pd:1.75W; DC Collector Current:2A; DC Current Gain hFE:12hFE; Transistor Case Style:TO-252; No.

    Onsemi Mjd117G of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):2V; Gain Bandwidth ft Typ:25MHz; Hfe Min:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • BIPOLAR, TRANSISTOR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:25MHz; Power Dissipation Pd:1.75W; DC Collector Current:2A; DC Current Gain hFE:12hFE; Transistor Case Style:TO-252; No.

    BIPOLAR, TRANSISTOR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:25MHz; Power Dissipation Pd:1.75W; DC Collector Current:2A; DC Current Gain hFE:12hFE; Transistor Case Style:TO-252; No.

    Onsemi Mjd117G of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):2V; Gain Bandwidth ft Typ:25MHz; Hfe Min:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI