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VISHAY

Vishay Si1016Cx-T1-Ge3

About The 5V; Threshold Voltage Vgs:400mV; Power Dissipation Pd:220mW; Transistor Case Style:SOT-563; No.MOSFET, NP CH, 20V, W DIODE, SOT563F; Transistor Polarity:N and P Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0

of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Continuous Drain Current Id, N Channel:600mA; Continuous Drain Current Id, P Channel:-600mA; Drain Source Voltage Vds, N Channel:20V; Drain Source Voltage Vds, P Channel:-20V; Module Configuration:High Side; On Resistance Rds(on), N Channel:0.33ohm; On Resistance Rds(on), P Channel:0.63ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C MOSFET, NP CH, 20V, W DIODE, SOT563F; Transistor Polarity:N and P Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400mV; Power Dissipation Pd:220mW; Transistor Case Style:SOT-563; No.

Semiconductors - Discretes

Vishay Si1016Cx-T1-Ge3

Semiconductors - Discretes

Specifications of Vishay Si1016Cx-T1-Ge3

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Vishay Si1016Cx-T1-Ge3
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