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INFINEON

Infineon Idw75E60Fksa1

About The DIODE, 600V, 120A, TO247-3; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):120A; Diode Configuration:Single; Forward Voltage VF Max:2V; Reverse Recovery Time trr Max:-; Forward Surge Current Ifsm Max:220A; Operating Temperature Max:175°C; Diode Case Style:TO-247; No. of Pins:3Pins; Product Range:IDW75 Series; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Diode Type:Standard Recovery; No

DIODE, 600V, 120A, TO247-3; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):120A; Diode Configuration:Single; Forward Voltage VF Max:2V; Reverse Recovery Time trr Max:-; Forward Surge Current Ifsm Max:220A; Operating Temperature Max:175°C; Diode Case Style:TO-247; No. of Pins:3 Pin; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C of Pins:3Pins; Product Range:IDW75 Series; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Diode Type:Standard Recovery; No.

Semiconductors - Discretes

Infineon Idw75E60Fksa1

Semiconductors - Discretes

Specifications of Infineon Idw75E60Fksa1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Idw75E60Fksa1
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Rating :- 8.16 /10
Votes :- 53
MOSFET, N-CH, 150V, 21A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:57W; Transistor Case Style:PG-TSDSON; No.

MOSFET, N-CH, 150V, 21A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:57W; Transistor Case Style:PG-TSDSON; No.

Infineon Bsz520N15Ns3Gatma1 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

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    • MOSFET, N-CH, 100V, 180A, TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No.

    MOSFET, N-CH, 100V, 180A, TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No.

    Infineon Ipb025N10N3Gatma1 of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • INFINEON
    • MOSFET, N-CH, 120V, 180A, TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No.

    MOSFET, N-CH, 120V, 180A, TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No.

    Infineon Ipb036N12N3Gatma1 of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 150V, 21A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:57W; Transistor Case Style:SuperSOT; No.

    MOSFET, N-CH, 150V, 21A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:57W; Transistor Case Style:SuperSOT; No.

    Infineon Bsc520N15Ns3Gatma1 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 150V, 21A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:57W; Transistor Case Style:SuperSOT; No.

    MOSFET, N-CH, 150V, 21A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:57W; Transistor Case Style:SuperSOT; No.

    Infineon Bsc520N15Ns3Gatma1 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

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  • INFINEON