MOSFET, N-CH, 100V, 160A, TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:214W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C
Semiconductors - Discretes
Infineon Ipb039N10N3Gatma1
Specifications of Infineon Ipb039N10N3Gatma1 | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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