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INFINEON

Infineon Irf5802Trpbf

About The 2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Voltage Vgs Rds on Measurement:10V

MOSFET, N, 150V, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:900mA; Drain Source Voltage Vds:150V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:2W; Transistor Case Style:TSOP; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Application Code:SMPS; Cont Current Id @ 25°C:900mA; Cont Current Id @ 70°C:0.7; Current Id Max:900mA; Junction to Case Thermal Resistance A:62.5°C/W; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:7A; Termination Type:Surface Mount Device; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V

Semiconductors - Discretes

Infineon Irf5802Trpbf

More from Semicondutores! Of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Application Code:SMPS; Cont Current Id @ 25°C:900mA; Cont Current Id @ 70°C:0.7; Current Id Max:900mA; Junction To Case Thermal Resistance A:62.5°C/W; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C To +150°C; Pulse Current Idm:7A; Termination Type:Surface Mount Device; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:5.5V; Voltage Vgs Rds On Measurement:10V
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Semiconductors - Discretes

Specifications of Infineon Irf5802Trpbf

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Irf5802Trpbf
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MOSFET, P, 55V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:74A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-263; No.

MOSFET, P, 55V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:74A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-263; No.

Infineon Irf4905Strlpbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:TO-262AB; Current Id Max:-74A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:260A; Termination Type:Surface Mount Device; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V.

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  • Semicondutores
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  • INFINEON
    • MOSFET, N, 150V, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:900mA; Drain Source Voltage Vds:150V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:2W; Transistor Case Style:TSOP; No.

    MOSFET, N, 150V, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:900mA; Drain Source Voltage Vds:150V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:2W; Transistor Case Style:TSOP; No.

    5V; Voltage Vgs Rds on Measurement:10V.5°C/W; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:7A; Termination Type:Surface Mount Device; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:5.7; Current Id Max:900mA; Junction to Case Thermal Resistance A:62.Infineon Irf5802Trpbf of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Application Code:SMPS; Cont Current Id @ 25°C:900mA; Cont Current Id @ 70°C:0.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • INFINEON
    • MOSFET, N, 200V, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):2.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:2W; Transistor Case Style:TSOP; No.

    MOSFET, N, 200V, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):2.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:2W; Transistor Case Style:TSOP; No.

    Infineon Irf5801Trpbf of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Application Code:SMPS; Cont Current Id @ 25°C:600mA; Cont Current Id @ 70°C:0.48; Current Id Max:600mA; Junction to Case Thermal Resistance A:62.8A; Termination Type:Surface Mount Device; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.5°C/W; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:4.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • INFINEON
    • MOSFET, P, 55V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:74A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-263; No.

    MOSFET, P, 55V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:74A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-263; No.

    Infineon Irf4905Strlpbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:TO-262AB; Current Id Max:-74A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:260A; Termination Type:Surface Mount Device; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, P, 55V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:74A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-263; No.

    MOSFET, P, 55V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:74A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-263; No.

    Infineon Irf4905Strlpbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:TO-262AB; Current Id Max:-74A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:260A; Termination Type:Surface Mount Device; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V.

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  • INFINEON