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PRO POWER

Pro Power Fps-016-6020-Blk

About The 35MM ID, PO, BLACK, PK OF 20 6" (152.4MM) PCS; Shrink Ratio:2:1; I

Supplied - Metric:6.35mm; Shrink Tubing / Boot Colour:Black; Length - Imperial:6"; Length - Metric:152.4mm HEAT SHRINK TUBING, 6.35MM ID, PO, BLACK, PK OF 20 6" (152.4MM) PCS; Shrink Ratio:2:1; I.D. Supplied - Imperial:0.25"; I.D.

Cable,Wire & Cable Assemblies

Pro Power Fps-016-6020-Blk

Cable,Wire & Cable Assemblies

Specifications of Pro Power Fps-016-6020-Blk

CategoryEletrônicos > Acessórios para eletrônicos > Gerenciamento de cabos
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Pro Power Fps-016-6020-Blk
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Rating :- 8.18 /10
Votes :- 52
MOSFET, P, 100V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:3.8W; Transistor Case Style:TO-263; No.

MOSFET, P, 100V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:3.8W; Transistor Case Style:TO-263; No.

Infineon Irf5210Strlpbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:TO-262AB; Current Id Max:-40A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:140A; Termination Type:Surface Mount Device; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N, 200V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:330W; Transistor Case Style:TO-247; No.

    MOSFET, N, 200V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:330W; Transistor Case Style:TO-247; No.

    45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:240V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.Infineon Irfp4227Pbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +175°C; Pulse Current Idm:260A; Rth:0.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, P, 100V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-263; No.

    MOSFET, P, 100V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-263; No.

    Infineon Irf9540Nstrlpbf of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:TO-262AB; Current Id Max:-23A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:76A; Termination Type:Surface Mount Device; Voltage Vds Typ:100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, P, 100V, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:3.1W; Transistor Case Style:TO-262; No.

    MOSFET, P, 100V, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:3.1W; Transistor Case Style:TO-262; No.

    3mA/V; On State Resistance Max:117mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; P Channel Gate Charge:97nC; Pulse Current Idm:76A; Rise Time:67ns; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V.Infineon Irf9540Nlpbf of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:430mJ; Capacitance Ciss Typ:1300pF; Current Iar:11A; Current Id Max:-23A; Fall Time tf:51ns; Gfs Min:5.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, P, 100V, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:3.1W; Transistor Case Style:TO-262; No.

    MOSFET, P, 100V, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:3.1W; Transistor Case Style:TO-262; No.

    Infineon Irf9540Nlpbf of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:430mJ; Capacitance Ciss Typ:1300pF; Current Iar:11A; Current Id Max:-23A; Fall Time tf:51ns; Gfs Min:5.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON