reorder
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New
Eletrônicos
Componentes e placas de circuitos
Semicondutores
Semiconductors - Discretes
INFINEON

Infineon Irf9540Nlpbf

About The 1W; Transistor Case Style:TO-262; No.3mA/V; On State Resistance Max:117mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; P Channel Gate Charge:97nC; Pulse Current Idm:76A; Rise Time:67ns; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

MOSFET, P, 100V, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:3.1W; Transistor Case Style:TO-262; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:430mJ; Capacitance Ciss Typ:1300pF; Current Iar:11A; Current Id Max:-23A; Fall Time tf:51ns; Gfs Min:5.3mA/V; On State Resistance Max:117mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; P Channel Gate Charge:97nC; Pulse Current Idm:76A; Rise Time:67ns; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

Semiconductors - Discretes

Infineon Irf9540Nlpbf

More from INFINEON? MOSFET, P, 100V, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:3.1W; Transistor Case Style:TO-262; No.
Search

Semiconductors - Discretes

Specifications of Infineon Irf9540Nlpbf

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
Instockinstock

Last Updated

Infineon Irf9540Nlpbf
More Varieties
Eletrônicos
Componentes e placas de circuitos

Rating :- 8.19 /10
Votes :- 53
Supplied - Imperial:0.5"; I.D.

Supplied - Imperial:0.5"; I.D.

7mm; Shrink Tubing / Boot Colour:Black; Length - Imperial:6"; Length - Metric:152.7MM ID, PO, BLACK, PK OF 14 6" (152.4MM) PCS; Shrink Ratio:2:1; I.

  • Eletrônicos
  • Acessórios para eletrônicos
  • Gerenciamento de cabos
  • Cable,Wire & Cable Assemblies
  • PRO POWER
    • Supplied - Imperial:0.375"; I.D.

    Supplied - Imperial:0.375"; I.D.

    525MM ID, PO, BLACK, PK OF 16 6" (152.Supplied - Metric:9.

  • Eletrônicos
  • Acessórios para eletrônicos
  • Gerenciamento de cabos
  • Cable,Wire & Cable Assemblies
  • PRO POWER
    • MOSFET, P, 100V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-263; No.

    MOSFET, P, 100V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-263; No.

    Infineon Irf9540Nstrlpbf of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:TO-262AB; Current Id Max:-23A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:76A; Termination Type:Surface Mount Device; Voltage Vds Typ:100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, P, 100V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:3.8W; Transistor Case Style:TO-263; No.

    MOSFET, P, 100V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:3.8W; Transistor Case Style:TO-263; No.

    Infineon Irf5210Strlpbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:TO-262AB; Current Id Max:-40A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:140A; Termination Type:Surface Mount Device; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N, 200V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:330W; Transistor Case Style:TO-247; No.

    MOSFET, N, 200V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:330W; Transistor Case Style:TO-247; No.

    45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:240V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.Infineon Irfp4227Pbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +175°C; Pulse Current Idm:260A; Rth:0.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, P, 100V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-263; No.

    MOSFET, P, 100V, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-263; No.

    Infineon Irf9540Nstrlpbf of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Alternate Case Style:TO-262AB; Current Id Max:-23A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:76A; Termination Type:Surface Mount Device; Voltage Vds Typ:100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, P, 100V, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:3.1W; Transistor Case Style:TO-262; No.

    MOSFET, P, 100V, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:3.1W; Transistor Case Style:TO-262; No.

    Infineon Irf9540Nlpbf of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:430mJ; Capacitance Ciss Typ:1300pF; Current Iar:11A; Current Id Max:-23A; Fall Time tf:51ns; Gfs Min:5.3mA/V; On State Resistance Max:117mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; P Channel Gate Charge:97nC; Pulse Current Idm:76A; Rise Time:67ns; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N, 75V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:370W; Transistor Case Style:TO-220AB; No.

    MOSFET, N, 75V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:370W; Transistor Case Style:TO-220AB; No.

    4; Termination Type:Through Hole; Voltage Vds:75V; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V.Infineon Irfb3077Pbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:240mJ; Capacitance Ciss Typ:9400pF; Cont Current Id @ 100°C:150A; Cont Current Id @ 25°C:210A; Current Id Max:210A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:850A; Rth:0.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, P, 100V, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:3.1W; Transistor Case Style:TO-262; No.

    MOSFET, P, 100V, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:3.1W; Transistor Case Style:TO-262; No.

    3mA/V; On State Resistance Max:117mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; P Channel Gate Charge:97nC; Pulse Current Idm:76A; Rise Time:67ns; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N, 75V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:370W; Transistor Case Style:TO-220AB; No.

    MOSFET, N, 75V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:370W; Transistor Case Style:TO-220AB; No.

    Infineon Irfb3077Pbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:240mJ; Capacitance Ciss Typ:9400pF; Cont Current Id @ 100°C:150A; Cont Current Id @ 25°C:210A; Current Id Max:210A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:850A; Rth:0.4; Termination Type:Through Hole; Voltage Vds:75V; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON