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IXYS SEMICONDUCTOR

Ixys Semiconductor Dhg10I1200Pa

About The 8°C/W; No.38V; Reverse Recovery Time trr Max:75ns; Forward Surge Current Ifsm Max:70A; Operating Temperature Max:150°C; Diode Case Style:TO-220AC; No

DIODE, FAST, 1200V, TO-220AC; Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):10A; Diode Configuration:Single; Forward Voltage VF Max:2.38V; Reverse Recovery Time trr Max:75ns; Forward Surge Current Ifsm Max:70A; Operating Temperature Max:150°C; Diode Case Style:TO-220AC; No. of Pins:2 Pin; Product Range:DHG10 Series; Automotive Qualification Standard:-; SVHC:No SVHC (12-Jan-2017); Case Temperature Tc @ If:85°C; Current If @ Vf:10A; Current Ifsm:70A; Diode Type:Fast Recovery; Forward Voltage:2.38V; Junction Temperature Tj Max:150°C; Junction to Case Thermal Resistance A:1.8°C/W; No. of Pins:2Pins; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pin Configuration:Single; Reverse Recovery Time trr Typ:75ns; Termination Type:Through Hole; Time on for IFSM:10ms

Semiconductors - Discretes

Ixys Semiconductor Dhg10I1200Pa

Semiconductors - Discretes

Specifications of Ixys Semiconductor Dhg10I1200Pa

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Ixys Semiconductor Dhg10I1200Pa
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