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Infineon Bsc042Ne7Ns3Gatma1

About The MOSFET, N CH, 75V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

MOSFET, N CH, 75V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power Dissipation Pd:125W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Infineon Bsc042Ne7Ns3Gatma1

Semiconductors - Discretes

Specifications of Infineon Bsc042Ne7Ns3Gatma1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Bsc042Ne7Ns3Gatma1
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Rating :- 8.08 /10
Votes :- 53
MOSFET, N CH, 200V, 36A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:125W; Transistor Case Style:TDSON; No.

MOSFET, N CH, 200V, 36A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:125W; Transistor Case Style:TDSON; No.

Infineon Bsc320N20Ns3Gatma1 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • INFINEON
    • MOSFET, N CH, 150V, 50A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:125W; Transistor Case Style:TDSON; No.

    MOSFET, N CH, 150V, 50A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:125W; Transistor Case Style:TDSON; No.

    Infineon Bsc190N15Ns3Gatma1 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • INFINEON
    • MOSFET, N CH, 120V, 98A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:98A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.0066ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:139W; Transistor Case Style:TDSON; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • INFINEON
    • MOSFET, P CH, -30V, -100A, TDSON-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-100A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:83W; Transistor Case Style:TDSON; No.

    MOSFET, P CH, -30V, -100A, TDSON-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-100A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:83W; Transistor Case Style:TDSON; No.

    Infineon Bsc060P03Ns3Egatma1 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, P CH, -30V, -100A, TDSON-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-100A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:83W; Transistor Case Style:TDSON; No.

    MOSFET, P CH, -30V, -100A, TDSON-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-100A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:83W; Transistor Case Style:TDSON; No.

    Infineon Bsc060P03Ns3Egatma1 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON