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INFINEON

Infineon Spp80P06Phxksa1

About The of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).021ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:340W; Transistor Case Style:TO-220; No

MOSFET, P CH, -60V, -80A, TO-220-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:340W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Infineon Spp80P06Phxksa1

Semiconductors - Discretes

Specifications of Infineon Spp80P06Phxksa1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Spp80P06Phxksa1
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Rating :- 8.12 /10
Votes :- 51
TRANSISTOR, BIPOL, NPN, 125V, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:125V; Transition Frequency ft:100MHz; Power Dissipation Pd:330mW; DC Collector Current:800mA; DC Current Gain hFE:25hFE; Transistor Case Style:SOT-23; No.

TRANSISTOR, BIPOL, NPN, 125V, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:125V; Transition Frequency ft:100MHz; Power Dissipation Pd:330mW; DC Collector Current:800mA; DC Current Gain hFE:25hFE; Transistor Case Style:SOT-23; No.

Infineon Bcx41E6327Htsa1 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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  • INFINEON
    • TRANSISTOR, RF, NPN, 12V, 8GHZ, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:580mW; DC Collector Current:80mA; DC Current Gain hFE:70hFE; RF Transistor Case:SOT-23; No.

    TRANSISTOR, RF, NPN, 12V, 8GHZ, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:580mW; DC Collector Current:80mA; DC Current Gain hFE:70hFE; RF Transistor Case:SOT-23; No.

    Infineon Bfr193E6327Htsa1 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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  • INFINEON
    • TRANS, RF, NPN, 4.7V, 45GHZ, SOT-343-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.7V; Transition Frequency ft:45GHz; Power Dissipation Pd:160mW; DC Collector Current:45mA; DC Current Gain hFE:160hFE; RF Transistor Case:SOT-343; No.

    TRANS, RF, NPN, 4.7V, 45GHZ, SOT-343-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.7V; Transition Frequency ft:45GHz; Power Dissipation Pd:160mW; DC Collector Current:45mA; DC Current Gain hFE:160hFE; RF Transistor Case:SOT-343; No.

    Infineon Bfp740Esdh6327Xtsa1 of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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  • INFINEON
    • TRANSISTOR, BIPOL, NPN, 125V, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:125V; Transition Frequency ft:100MHz; Power Dissipation Pd:330mW; DC Collector Current:800mA; DC Current Gain hFE:25hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, BIPOL, NPN, 125V, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:125V; Transition Frequency ft:100MHz; Power Dissipation Pd:330mW; DC Collector Current:800mA; DC Current Gain hFE:25hFE; Transistor Case Style:SOT-23; No.

    Infineon Bcx41E6327Htsa1 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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  • INFINEON
    • MOSFET, N CH, 150V, 21A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.044ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:68W; Transistor Case Style:TO-252; No.
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  • INFINEON
    • MOSFET, N CH, 100V, 30A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0258ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:57W; Transistor Case Style:TO-252; No.

    MOSFET, N CH, 100V, 30A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0258ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:57W; Transistor Case Style:TO-252; No.

    Infineon Ipd30N10S3L34Atma1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • INFINEON
    • MOSFET, P CH, -60V, -80A, TO-220-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:340W; Transistor Case Style:TO-220; No.

    MOSFET, P CH, -60V, -80A, TO-220-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:340W; Transistor Case Style:TO-220; No.

    Infineon Spp80P06Phxksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • INFINEON
    • MOSFET, P CH, -60V, -18.7A, TO-220-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-18.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.102ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.7V; Power Dissipation Pd:81.1W; Transistor Case Style:TO-220; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • INFINEON
    • MOSFET, P CH, -60V, -80A, TO-220-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:340W; Transistor Case Style:TO-220; No.

    MOSFET, P CH, -60V, -80A, TO-220-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:340W; Transistor Case Style:TO-220; No.

    Infineon Spp80P06Phxksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, P CH, -60V, -18.7A, TO-220-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-18.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.102ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.7V; Power Dissipation Pd:81.1W; Transistor Case Style:TO-220; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • INFINEON