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ONSEMI

Onsemi Mmbta42Lt1G

About The of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):500mV; Current Ic Continuous a Max:20mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:40; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-23; No

TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):500mV; Current Ic Continuous a Max:20mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:40; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device

Semiconductors - Discretes

Onsemi Mmbta42Lt1G

Semiconductors - Discretes

Specifications of Onsemi Mmbta42Lt1G

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Onsemi Mmbta42Lt1G
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Rating :- 8.1 /10
Votes :- 52
DIODE, ZENER, 1.8V, 0.5W, SOD-123; Zener Voltage Vz Typ:1.8V; Power Dissipation Pd:500mW; Diode Case Style:SOD-123; Zener Tolerance ±:5%; No.

DIODE, ZENER, 1.8V, 0.5W, SOD-123; Zener Voltage Vz Typ:1.8V; Power Dissipation Pd:500mW; Diode Case Style:SOD-123; Zener Tolerance ±:5%; No.

8V; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Test Current:50µA.Onsemi Mmsz4678T1G of Pins:2Pins; Operating Temperature Max:150°C; Product Range:MMSZxxxT1G Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (27-Jun-2018); Breakdown Voltage Max:1.89V; Breakover Voltage Min:1.

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    • DIODE, SIGNAL, 100V, SOD-123; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):200mA; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:500mA; Operating Temperature Max:150°C; Diode Case Style:SOD-123; No.

    DIODE, SIGNAL, 100V, SOD-123; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):200mA; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:500mA; Operating Temperature Max:150°C; Diode Case Style:SOD-123; No.

    Onsemi Mmsd914T1G of Pins:2Pins; Product Range:MMSD9 Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (27-Jun-2018); Breakdown Voltage Max:100V; Current Ifsm:1A; Junction Temperature Tj Max:150°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Typ:4ns; Termination Type:Surface Mount Device.

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    • DIODE, TVS, UNI, 5.6V, SC-74; Product Range:MMQA Series; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:5.6V; Clamping Voltage Vc Max:8V; Diode Case Style:SC-74; No.
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    • TRANSISTOR, NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:650MHz; Power Dissipation Pd:225mW; DC Collector Current:4mA; DC Current Gain hFE:60hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:650MHz; Power Dissipation Pd:225mW; DC Collector Current:4mA; DC Current Gain hFE:60hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbth10Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):500mV; Current Ic Continuous a Max:4A; Gain Bandwidth ft Typ:650MHz; Hfe Min:60; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:300mW; Termination Type:Surface Mount Device.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • ONSEMI
    • TRANSISTOR, NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:650MHz; Power Dissipation Pd:225mW; DC Collector Current:4mA; DC Current Gain hFE:60hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:650MHz; Power Dissipation Pd:225mW; DC Collector Current:4mA; DC Current Gain hFE:60hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbth10Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):500mV; Current Ic Continuous a Max:4A; Gain Bandwidth ft Typ:650MHz; Hfe Min:60; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:300mW; Termination Type:Surface Mount Device.

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  • ONSEMI