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Onsemi Ncv8402Astt1G

About The of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1

MOSFET, N-CH, 42V, 2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:42V; On Resistance Rds(on):0.165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:1.1W; Transistor Case Style:SOT-223; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

Semiconductors - Discretes

Onsemi Ncv8402Astt1G

More from ONSEMI? MOSFET, N-CH, 42V, 2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:42V; On Resistance Rds(on):0.165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:1.1W; Transistor Case Style:SOT-223; No.
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Semiconductors - Discretes

Specifications of Onsemi Ncv8402Astt1G

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Onsemi Ncv8402Astt1G
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MOSFET, N-CH, 20V, 2.5A, TSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:850mV; Power Dissipation Pd:500mW; Transistor Case Style:TSOP; No.
  • Eletrônicos
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    • MOSFET, N AND P CH, 30V, 2.6A, TSOP-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:900mW; Transistor Case Style:TSOP; No.
  • Eletrônicos
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  • ONSEMI
    • MOSFET, N CHANNEL, 60V, 18A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.054ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:55W; Transistor Case Style:TO-252; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N-CH, 20V, 2.5A, TSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:850mV; Power Dissipation Pd:500mW; Transistor Case Style:TSOP; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N AND P CH, 30V, 2.6A, TSOP-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:900mW; Transistor Case Style:TSOP; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N-CH, 20V, 0.238A, SOT-416; Transistor Polarity:N Channel; Continuous Drain Current Id:238mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:300mW; Transistor Case Style:SOT-416; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N-CH, 42V, 2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:42V; On Resistance Rds(on):0.165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:1.1W; Transistor Case Style:SOT-223; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N CHANNEL, 60V, 18A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.054ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:55W; Transistor Case Style:TO-252; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N-CH, 42V, 2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:42V; On Resistance Rds(on):0.165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:1.1W; Transistor Case Style:SOT-223; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N CHANNEL, 60V, 18A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.054ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:55W; Transistor Case Style:TO-252; No.
  • Eletrônicos
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  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI