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Onsemi Ntzs3151Pt1G

About The 12ohm; Rds(on) Test Voltage Vgs:-4.86A, SOT-563-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-860mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0

MOSFET, P CH, -20V, -0.86A, SOT-563-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-860mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:210mW; Transistor Case Style:SOT-563; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Onsemi Ntzs3151Pt1G

More from ONSEMI? MOSFET, P CH, -20V, -0.86A, SOT-563-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-860mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:210mW; Transistor Case Style:SOT-563; No.
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Semiconductors - Discretes

Specifications of Onsemi Ntzs3151Pt1G

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Onsemi Ntzs3151Pt1G
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SCHOTTKY RECT, 0.2A, 30V, SC-89; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):200mA; Diode Configuration:Dual Common Cathode; Diode Case Style:SC-89; No.

SCHOTTKY RECT, 0.2A, 30V, SC-89; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):200mA; Diode Configuration:Dual Common Cathode; Diode Case Style:SC-89; No.

Onsemi Bat54Cxv3T1G of Pins:3Pins; Forward Voltage VF Max:800mV; Forward Surge Current Ifsm Max:600mA; Operating Temperature Max:125°C; Product Range:BAT54 Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (27-Jun-2018); Semiconductor Technology:Si.

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    • RECTIFIER, FAST, 2A, 600V, DO-204AL; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):2A; Diode Configuration:Single; Forward Voltage VF Max:1.35V; Reverse Recovery Time trr Max:75ns; Forward Surge Current Ifsm Max:35A; Operating Temperature Max:175°C; Diode Case Style:DO-41 (DO-204AL); No.
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    • MOSFET, P-CH, -60V, -6A, WDFN-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:3.2W; Transistor Case Style:WDFN; No.
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    • MOSFET, N-CH, 60V, 2.2A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.107ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:1.5W; Transistor Case Style:SOT-23; No.
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    • MOSFET, P-CH, -60V, -6A, WDFN-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:3.2W; Transistor Case Style:WDFN; No.
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  • ONSEMI
    • MOSFET, N-CH, 60V, 2.2A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.107ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:1.5W; Transistor Case Style:SOT-23; No.
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    • MOSFET, P CH, -20V, -0.86A, SOT-563-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-860mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:210mW; Transistor Case Style:SOT-563; No.
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    • MOSFET, DUAL N-CH, 20V, 0.54A, SOT-563; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:540mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:250mW; Transistor Case Style:SOT-563; No.
  • Eletrônicos
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  • ONSEMI
    • MOSFET, P CH, -20V, -0.86A, SOT-563-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-860mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:210mW; Transistor Case Style:SOT-563; No.
  • Eletrônicos
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  • ONSEMI
    • MOSFET, DUAL N-CH, 20V, 0.54A, SOT-563; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:540mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:250mW; Transistor Case Style:SOT-563; No.
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