Vishay Sia456Dj-T1-Ge3

Name: Semicondutores! Of Pins:6Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:-
Brand: VISHAY
SKU: CAJF-548244
Price: 1.22 EUR
Availability: InStock

About The 5V; Threshold Voltage Vgs:1.MOSFET, N-CH, 200V, 2

MOSFET, N-CH, 200V, 2.6A, SC-70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.08ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V; Power Dissipation Pd:19W; Transistor Case Style:SC-70; No. of Pins:6Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:-

Specifications of Vishay Sia456Dj-T1-Ge3
Category	Eletrônicos > Componentes e placas de circuitos > Semicondutores
Instock	instock

Vishay Sia456Dj-T1-Ge3

About The 5V; Threshold Voltage Vgs:1.MOSFET, N-CH, 200V, 2

Semiconductors - Discretes

Specifications of Vishay Sia456Dj-T1-Ge3

MOSFET, P-CH, -60V, -8A, POWERPAK 1212-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.092ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:19.8W; Transistor Case Style:PowerPAK 1212; No.

MOSFET, N-CH, 60V, 6A, POWERPAK 1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:19.8W; Transistor Case Style:PowerPAK 1212; No.

MOSFET, N-CH, 100V, 28A, TO-263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power Dissipation Pd:150W; Transistor Case Style:TO-263AB; No.

MOSFET, P-CH, -50V, -18A, TO-220AB-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-18A; Drain Source Voltage Vds:-50V; On Resistance Rds(on):0.093ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:74W; Transistor Case Style:TO-220AB; No.

MOSFET, P-CH, -60V, -8A, POWERPAK 1212-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.092ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:19.8W; Transistor Case Style:PowerPAK 1212; No.

MOSFET, N-CH, 60V, 6A, POWERPAK 1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:19.8W; Transistor Case Style:PowerPAK 1212; No.

MOSFET, N-CH, 200V, 2.6A, SC-70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.08ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V; Power Dissipation Pd:19W; Transistor Case Style:SC-70; No.

MOSFET, N-CH, 200V, 2.6A, SC-70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.08ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V; Power Dissipation Pd:19W; Transistor Case Style:SC-70; No.

MOSFET, N-CH, 200V, 2.6A, SC-70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.08ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V; Power Dissipation Pd:19W; Transistor Case Style:SC-70; No.

MOSFET, N-CH, 200V, 2.6A, SC-70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.08ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V; Power Dissipation Pd:19W; Transistor Case Style:SC-70; No.