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ONSEMI

Onsemi Sbav99Lt1G

About The DIODE, SMALL SIG, AUTO, 100V, SOT-23; Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):715mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:6ns; Forward Surge Current Ifsm Max:500mA; Operating Temperature Max:150°C; Diode Case Style:SOT-23; No

DIODE, SMALL SIG, AUTO, 100V, SOT-23; Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):715mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:6ns; Forward Surge Current Ifsm Max:500mA; Operating Temperature Max:150°C; Diode Case Style:SOT-23; No. of Pins:3Pins; Product Range:-; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Onsemi Sbav99Lt1G

Semiconductors - Discretes

Specifications of Onsemi Sbav99Lt1G

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Onsemi Sbav99Lt1G
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Rating :- 8.23 /10
Votes :- 53
TRANSISTOR, NPN, 160V, 0.225W, SOT-23.; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:-; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:30hFE; Tran
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  • ONSEMI
    • TRANSISTOR, PNP, -40V, 0.225W, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:250MHz; Power Dissipation Pd:225mW; DC Collector Current:-200mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, PNP, -40V, 0.225W, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:250MHz; Power Dissipation Pd:225mW; DC Collector Current:-200mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-23; No.

    Onsemi Smmbt3906Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • Semicondutores
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  • ONSEMI
    • TRANSISTOR, NPN, 40V, 0.225W, SOT-23.; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:40hFE; T
  • Eletrônicos
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  • Semicondutores
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  • ONSEMI
    • TRANSISTOR, NPN, 65V, 0.225W, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:225mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, NPN, 65V, 0.225W, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:225mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.

    Onsemi Sbc846Blt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BC846ALT1G Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, NPN, 65V, 0.225W, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:225mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, NPN, 65V, 0.225W, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power Dissipation Pd:225mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.

    Onsemi Sbc846Blt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BC846ALT1G Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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  • ONSEMI