reorder
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New
Eletrônicos
Componentes e placas de circuitos
Semicondutores
Semiconductors - Discretes
STMICROELECTRONICS

Stmicroelectronics Stfu9N65M2

About The POWER MOSFET, N CHANNEL, 5A, TO-220FP-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.79ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:20W; Transistor Case Style:TO-220FP; No

POWER MOSFET, N CHANNEL, 5A, TO-220FP-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.79ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:20W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017)

Semiconductors - Discretes

Stmicroelectronics Stfu9N65M2

Semiconductors - Discretes

Specifications of Stmicroelectronics Stfu9N65M2

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
Instockinstock

Last Updated

Stmicroelectronics Stfu9N65M2
More Varieties
Eletrônicos
Componentes e placas de circuitos

Rating :- 9.93 /10
Votes :- 54
POWER MOSFET, N CHANNEL, 18A, TO-262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:130W; Transistor Case Style:TO-262; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • STMICROELECTRONICS
    • IGBT, SINGLE, 650V, 160A, MAX-247-3; DC Collector Current:160A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:625W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:MAX-247; No.

    IGBT, SINGLE, 650V, 160A, MAX-247-3; DC Collector Current:160A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:625W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:MAX-247; No.

    Stmicroelectronics Stgya120M65Df2Ag of Pins:3Pins; Operating Temperature Max:175°C; Product Range:M Series; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (12-Jan-2017).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • STMICROELECTRONICS
    • IGBT, SINGLE, 1.2KV, 16A, TO-247-3; DC Collector Current:16A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

    IGBT, SINGLE, 1.2KV, 16A, TO-247-3; DC Collector Current:16A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

    Stmicroelectronics Stgwa8M120Df3 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:M Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • STMICROELECTRONICS
    • IGBT, SINGLE, 650V, 8A, TO-220-3; DC Collector Current:8A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:68W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No.

    IGBT, SINGLE, 650V, 8A, TO-220-3; DC Collector Current:8A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:68W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No.

    Stmicroelectronics Stgp4M65Df2 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:M Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • STMICROELECTRONICS
    • IGBT, SINGLE, 650V, 8A, TO-220-3; DC Collector Current:8A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:68W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No.

    IGBT, SINGLE, 650V, 8A, TO-220-3; DC Collector Current:8A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:68W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No.

    Stmicroelectronics Stgp4M65Df2 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:M Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • STMICROELECTRONICS