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Panasonic Eeufr1V680

About The 3mm; Lead Spacing:2.5mm; Height:11

CAP, 68µF, 35V, 20%; Capacitance:68µF; Voltage Rating:35V; Product Range:FR Series; Capacitance Tolerance:± 20%; Capacitor Terminals:Radial Leaded; Diameter:6.3mm; Lead Spacing:2.5mm; Height:11.2mm; Operating Temperature Min:-40°C; Operating Temperature Max:105°C; Lifetime @ Temperature:5000 hours @ 105°C; ESR:-; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)

Passive Components

Panasonic Eeufr1V680

CAP, 33µF, 35V, 20%; Capacitance:33µF; Voltage Rating:35V; Product Range:FR Series; Capacitance Tolerance:± 20%; Capacitor Terminals:Radial Leaded; Diameter:5mm; Lead Spacing:2mm; Height:11mm; Operating Temperature Min:-40°C; Operating Temperature Max:105°C; Lifetime @ Temperature:5000 hours @ 105°C; ESR:-; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)
CAP, 820µF, 35V, 20%; Capacitance:820µF; Voltage Rating:35V; Product Range:FR Series; Capacitance Tolerance:± 20%; Capacitor Terminals:Radial Leaded; Diameter:10mm; Lead Spacing:5mm; Height:25mm; Operating Temperature Min:-40°C; Operating Temperature Max:105°C; Lifetime @ Temperature:10000 hours @ 105°C; ESR:-; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)
More from Componentes E Placas De Circuitos: CAP, 68µF, 35V, 20%; Capacitance:68µF; Voltage Rating:35V; Product Range:FR Series; Capacitance Tolerance:± 20%; Capacitor Terminals:Radial Leaded; Diameter:6.3mm; Lead Spacing:2.5mm; Height:11.2mm; Operating Temperature Min:-40°C; Operating Temperature Max:105°C; Lifetime @ Temperature:5000 Hours @ 105°C; ESR:-; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)
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Specifications of Panasonic Eeufr1V680

CategoryEletrônicos > Componentes e placas de circuitos > Componentes de circuito passivo > Capacitadores
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Panasonic Eeufr1V680
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MOSFET, N-CH, AUTO, 43A, 80V, SOT1210; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:79W; Transistor Case Style:SOT-1210; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, N-CH, AUTO, 43A, 60V, SOT1210; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:62W; Transistor Case Style:SOT-1210; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, N-CH, AUTO, 43A, 80V, SOT1210; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:79W; Transistor Case Style:SOT-1210; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, N-CH, AUTO, 43A, 60V, SOT1210; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:62W; Transistor Case Style:SOT-1210; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, N-CH, AUTO, 43A, 60V, SOT1210; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:62W; Transistor Case Style:SOT-1210; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA