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Infineon Idm10G120C5Xtma1

About The 2KV, 38A, TO-252; Product Range:thinQ 5G 1200V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.8V; Operating Temperature Max:175°C; Semiconductor Technology:SiC

SIC SCHOTTKY DIODE, 1.2KV, 38A, TO-252; Product Range:thinQ 5G 1200V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:38A; Total Capacitive Charge Qc:41nC; Diode Case Style:TO-252; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Forward Current If(AV):38A; Forward Surge Current Ifsm Max:99A; Forward Voltage VF Max:1.8V; Operating Temperature Max:175°C; Semiconductor Technology:SiC

Semiconductors - Discretes

Infineon Idm10G120C5Xtma1

Semiconductors - Discretes

Specifications of Infineon Idm10G120C5Xtma1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Idm10G120C5Xtma1
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