reorder
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New
Eletrônicos
Componentes e placas de circuitos
Semicondutores
Semiconductors - Discretes
INFINEON

Infineon Ikw30N65H5Xksa1

About The of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).65V; Power Dissipation Pd:188W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No

IGBT, SINGLE, 650V, 55A, TO-247; DC Collector Current:55A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:188W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Infineon Ikw30N65H5Xksa1

Semiconductors - Discretes

Specifications of Infineon Ikw30N65H5Xksa1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
Instockinstock

Last Updated

Infineon Ikw30N65H5Xksa1
More Varieties
Eletrônicos
Componentes e placas de circuitos

Rating :- 8.17 /10
Votes :- 52
MOSFET, N-CH, 25V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:69W; Transistor Case Style:TDSON; No.

MOSFET, N-CH, 25V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:69W; Transistor Case Style:TDSON; No.

Infineon Bsc018Ne2Lsiatma1 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 25V, 163A, WDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:163A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:57W; Transistor Case Style:WDSON; No.

    MOSFET, N-CH, 25V, 163A, WDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:163A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:57W; Transistor Case Style:WDSON; No.

    Infineon Bsb013Ne2Lxixuma1 of Pins:2Pins; Operating Temperature Max:150°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, AEC-Q101, P-CH, -100V, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.205ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:66W; Transistor Case Style:TO-252; No.

    MOSFET, AEC-Q101, P-CH, -100V, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.205ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:66W; Transistor Case Style:TO-252; No.

    Infineon Auirfr5410Trl of Pins:3Pins; Operating Temperature Max:150°C; Product Range:HEXFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, AEC-Q101, N-CH, 60V, DIRECTFET; Transistor Polarity:N Channel; Continuous Drain Current Id:345A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:341W; Transistor Case Style:DirectFET SB; No.

    MOSFET, AEC-Q101, N-CH, 60V, DIRECTFET; Transistor Polarity:N Channel; Continuous Drain Current Id:345A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:341W; Transistor Case Style:DirectFET SB; No.

    Infineon Auirf7749L2Tr of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HEXFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, AEC-Q101, P-CH, -100V, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-38A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:170W; Transistor Case Style:TO-263; No.

    MOSFET, AEC-Q101, P-CH, -100V, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-38A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:170W; Transistor Case Style:TO-263; No.

    Infineon Auirf5210Strl of Pins:3Pins; Operating Temperature Max:150°C; Product Range:HEXFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.4V; Power Dissipation Pd:230W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No.

    IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.4V; Power Dissipation Pd:230W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No.

    Infineon Ikw40N65Wr5Xksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • IGBT, SINGLE, 650V, 55A, TO-247; DC Collector Current:55A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:188W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No.

    IGBT, SINGLE, 650V, 55A, TO-247; DC Collector Current:55A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:188W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No.

    Infineon Ikw30N65H5Xksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • IGBT, SINGLE, 650V, 55A, TO-220; DC Collector Current:55A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:188W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No.

    IGBT, SINGLE, 650V, 55A, TO-220; DC Collector Current:55A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:188W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No.

    Infineon Ikp30N65H5Xksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • IGBT, SINGLE, 650V, 55A, TO-247; DC Collector Current:55A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:188W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No.

    IGBT, SINGLE, 650V, 55A, TO-247; DC Collector Current:55A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:188W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No.

    Infineon Ikw30N65H5Xksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • IGBT, SINGLE, 650V, 55A, TO-220; DC Collector Current:55A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:188W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No.

    IGBT, SINGLE, 650V, 55A, TO-220; DC Collector Current:55A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:188W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No.

    Infineon Ikp30N65H5Xksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON