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INFINEON

Infineon Ikd06N60Rfatma1

About The .2V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No

IGBT, SINGLE, 600V, 12A, TO-252; DC Collector Current:12A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Infineon Ikd06N60Rfatma1

Semiconductors - Discretes

Specifications of Infineon Ikd06N60Rfatma1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Ikd06N60Rfatma1
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Rating :- 8.16 /10
Votes :- 54
MOSFET, N-CH, 60V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:74W; Transistor Case Style:TDSON; No.

MOSFET, N-CH, 60V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:74W; Transistor Case Style:TDSON; No.

Infineon Bsc034N06Nsatma1 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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  • INFINEON
    • MOSFET, N-CH, 25V, 82A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:82A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:29W; Transistor Case Style:TDSON; No.

    MOSFET, N-CH, 25V, 82A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:82A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:29W; Transistor Case Style:TDSON; No.

    Infineon Bsc026Ne2Ls5Atma1 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • INFINEON
    • MOSFET, N-CH, 25V, 163A, WDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:163A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:57W; Transistor Case Style:WDSON; No.

    MOSFET, N-CH, 25V, 163A, WDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:163A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:57W; Transistor Case Style:WDSON; No.

    Infineon Bsb013Ne2Lxixuma1 of Pins:2Pins; Operating Temperature Max:150°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018).

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  • INFINEON
    • MOSFET, AEC-Q101, P-CH, -100V, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.205ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:66W; Transistor Case Style:TO-252; No.

    MOSFET, AEC-Q101, P-CH, -100V, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.205ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:66W; Transistor Case Style:TO-252; No.

    Infineon Auirfr5410Trl of Pins:3Pins; Operating Temperature Max:150°C; Product Range:HEXFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, AEC-Q101, P-CH, -100V, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.205ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:66W; Transistor Case Style:TO-252; No.

    MOSFET, AEC-Q101, P-CH, -100V, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.205ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:66W; Transistor Case Style:TO-252; No.

    Infineon Auirfr5410Trl of Pins:3Pins; Operating Temperature Max:150°C; Product Range:HEXFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • INFINEON