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INFINEON

Infineon Ipb027N10N5Atma1

About The MOSFET, N-CH, 100V, 166A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:166A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No

MOSFET, N-CH, 100V, 166A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:166A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Infineon Ipb027N10N5Atma1

Semiconductors - Discretes

Specifications of Infineon Ipb027N10N5Atma1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Ipb027N10N5Atma1
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Rating :- 8.17 /10
Votes :- 54
MOSFET, AEC-Q101, N-CH, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0203ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:71W; Transistor Case Style:TO-263; No.

MOSFET, AEC-Q101, N-CH, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0203ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:71W; Transistor Case Style:TO-263; No.

Infineon Ipb35N10S3L26Atma1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • INFINEON
    • MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:40V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No.

    MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:40V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No.

    Infineon Ipb180N04S4H0Atma1 of Pins:7Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No.

    MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No.

    Infineon Ipb160N04S203Atma4 of Pins:7Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, AEC-Q101, N-CH, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0203ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:71W; Transistor Case Style:TO-263; No.

    MOSFET, AEC-Q101, N-CH, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0203ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:71W; Transistor Case Style:TO-263; No.

    Infineon Ipb35N10S3L26Atma1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:40V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No.

    MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:40V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No.

    Infineon Ipb180N04S4H0Atma1 of Pins:7Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 100V, 166A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:166A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No.

    MOSFET, N-CH, 100V, 166A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:166A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No.

    Infineon Ipb027N10N5Atma1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 100V, 166A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:166A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No.

    MOSFET, N-CH, 100V, 166A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:166A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No.

    Infineon Ipb027N10N5Atma1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 500V, 6.6A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power Dissipation Pd:25.7W; Transistor Case Style:TO-220FP; No.

    MOSFET, N-CH, 500V, 6.6A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power Dissipation Pd:25.7W; Transistor Case Style:TO-220FP; No.

    Infineon Ipa50R950Cexksa2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CE Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 100V, 166A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:166A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No.

    MOSFET, N-CH, 100V, 166A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:166A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No.

    Infineon Ipb027N10N5Atma1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 500V, 6.6A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power Dissipation Pd:25.7W; Transistor Case Style:TO-220FP; No.

    MOSFET, N-CH, 500V, 6.6A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power Dissipation Pd:25.7W; Transistor Case Style:TO-220FP; No.

    Infineon Ipa50R950Cexksa2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CE Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON