MOSFET, N-CH, 80V, 73A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:73A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0079ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:100W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Semiconductors - Discretes
Infineon Ipd096N08N3Gatma1
Specifications of Infineon Ipd096N08N3Gatma1 | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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