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INFINEON

Infineon Ipd26N06S2L35Atma2

About The 6V; Power Dissipation Pd:68W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

MOSFET, AEC-Q101, N-CH, 55V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:68W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Infineon Ipd26N06S2L35Atma2

Semiconductors - Discretes

Specifications of Infineon Ipd26N06S2L35Atma2

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Ipd26N06S2L35Atma2
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Rating :- 8.15 /10
Votes :- 51
MOSFET, AEC-Q101, N-CH, 40V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:150W; Transistor Case Style:TO-252; No.

MOSFET, AEC-Q101, N-CH, 40V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:150W; Transistor Case Style:TO-252; No.

Infineon Ipd90N04S402Atma1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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  • INFINEON
    • MOSFET, N-CH, 500V, 9A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.59ohm; Rds(on) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power Dissipation Pd:69W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 500V, 9A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.59ohm; Rds(on) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power Dissipation Pd:69W; Transistor Case Style:TO-252; No.

    Infineon Ipd50R650Ceauma1 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CE Series; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018).

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  • INFINEON
    • MOSFET, N-CH, 500V, 4.8A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.26ohm; Rds(on) Test Voltage ; Available until stocks are exhausted
  • Eletrônicos
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  • INFINEON
    • MOSFET, AEC-Q101, N-CH, 30V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:56W; Transistor Case Style:TO-252; No.

    MOSFET, AEC-Q101, N-CH, 30V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:56W; Transistor Case Style:TO-252; No.

    Infineon Ipd50N03S4L06Atma1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • Semicondutores
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  • INFINEON
    • MOSFET, AEC-Q101, N-CH, 30V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:136W; Transistor Case Style:TO-252; No.

    MOSFET, AEC-Q101, N-CH, 30V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:136W; Transistor Case Style:TO-252; No.

    Infineon Ipd50N03S2L06Atma1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • INFINEON
    • MOSFET, AEC-Q101, N-CH, 30V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    MOSFET, AEC-Q101, N-CH, 30V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    Infineon Ipd30N03S2L20Atma1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • INFINEON
    • MOSFET, AEC-Q101, N-CH, 55V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:68W; Transistor Case Style:TO-252; No.

    MOSFET, AEC-Q101, N-CH, 55V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:68W; Transistor Case Style:TO-252; No.

    Infineon Ipd26N06S2L35Atma2 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • INFINEON
    • MOSFET, N-CH, 80V, 45A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0114ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:79W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 80V, 45A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0114ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:79W; Transistor Case Style:TO-252; No.

    Infineon Ipd135N08N3Gatma1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, AEC-Q101, N-CH, 55V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:68W; Transistor Case Style:TO-252; No.

    MOSFET, AEC-Q101, N-CH, 55V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:68W; Transistor Case Style:TO-252; No.

    Infineon Ipd26N06S2L35Atma2 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 80V, 45A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0114ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:79W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 80V, 45A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0114ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:79W; Transistor Case Style:TO-252; No.

    Infineon Ipd135N08N3Gatma1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
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  • INFINEON