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INFINEON

Infineon Ipg16N10S461Atma1

About The of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2

MOSFET, AEC-Q101, N-CH, 100V, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:29W; Transistor Case Style:TDSON; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Infineon Ipg16N10S461Atma1

Semiconductors - Discretes

Specifications of Infineon Ipg16N10S461Atma1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Ipg16N10S461Atma1
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Rating :- 8.16 /10
Votes :- 50
MOSFET, AEC-Q101, N-CH, 30V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:56W; Transistor Case Style:TO-252; No.

MOSFET, AEC-Q101, N-CH, 30V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:56W; Transistor Case Style:TO-252; No.

Infineon Ipd50N03S4L06Atma1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, AEC-Q101, N-CH, 30V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:136W; Transistor Case Style:TO-252; No.

    MOSFET, AEC-Q101, N-CH, 30V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:136W; Transistor Case Style:TO-252; No.

    Infineon Ipd50N03S2L06Atma1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, AEC-Q101, N-CH, 40V, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:94W; Transistor Case Style:TO-262; No.

    MOSFET, AEC-Q101, N-CH, 40V, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:94W; Transistor Case Style:TO-262; No.

    Infineon Ipi80N04S403Aksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 100V, 80A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:125W; Transistor Case Style:TO-262; No.

    MOSFET, N-CH, 100V, 80A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:125W; Transistor Case Style:TO-262; No.

    Infineon Ipi086N10N3Gxksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 100V, 80A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:125W; Transistor Case Style:TO-262; No.

    MOSFET, N-CH, 100V, 80A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:125W; Transistor Case Style:TO-262; No.

    Infineon Ipi086N10N3Gxksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON