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Infineon Irf60Dm206

About The MOSFET, N CH, 60V, 130A, DIRECTFET ME-8; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.; Available until stocks are exhausted Alternative available

MOSFET, N CH, 60V, 130A, DIRECTFET ME-8; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.; Available until stocks are exhausted Alternative available

Semiconductors - Discretes

Infineon Irf60Dm206

Semiconductors - Discretes

Specifications of Infineon Irf60Dm206

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Irf60Dm206
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Rating :- 8.23 /10
Votes :- 52
MOSFET, N-CH, 25V, 38A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:25V; On Resistance Rds(on):950µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:96W; Transistor Case Style:DirectFET MX; No.
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    • MOSFET, N-CH, 40V, 90A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 40V, 90A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No.

    Infineon Irf40R207 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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    • MOSFET, N-CH, 75V, 106A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:106A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-263; No.

    MOSFET, N-CH, 75V, 106A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:106A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-263; No.

    Infineon Irf3808Strlpbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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    • MOSFET, N-CH, 55V, 75A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-263; No.

    MOSFET, N-CH, 55V, 75A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-263; No.

    Infineon Irf1010Zstrlpbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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  • INFINEON
    • MOSFET, N-CH, 55V, 75A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-263; No.

    MOSFET, N-CH, 55V, 75A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-263; No.

    Infineon Irf1010Zstrlpbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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