Infineon Bfr360L3E6765Xtma1

Rating :- 8.13 /10

Votes :- 50

IGBT, MODULE, N-CH, 600V, 34A; Transistor Polarity:N Channel; DC Collector Current:34A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:88W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:Module; No.

Infineon Fs30R06Ve3Boma1 of Pins:-; Operating Temperature Max:150Â°C; Product Range:EconoPACK Series; SVHC:No SVHC (27-Jun-2018).

IGBT, MODULE, N-CH, 1.2KV, 75A; Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:385W; Collector Emit; Available until stocks are exhausted

Infineon Fp75R12Kt4B11Bosa1.

IGBT, MODULE, N-CH, 1.2KV, 54A; Transistor Polarity:N Channel; DC Collector Current:54A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:215W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No.

Infineon Fp35R12W2T4B11Boma1 of Pins:-; Operating Temperature Max:150Â°C; Product Range:EconoPIM 2B Series; SVHC:No SVHC (27-Jun-2018).

IGBT, MODULE, N-CH, 1.2KV, 39A; Transistor Polarity:N Channel; DC Collector Current:39A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:175W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No.

Infineon Fp25R12W2T4B11Boma1 of Pins:-; Operating Temperature Max:150Â°C; Product Range:EasyPIM 2B Series; SVHC:No SVHC (27-Jun-2018).

IGBT, MODULE, N-CH, 1.2KV, 28A; Transistor Polarity:N Channel; DC Collector Current:28A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No.

Infineon Fp15R12W1T4B11Boma1 of Pins:-; Operating Temperature Max:150Â°C; Product Range:EasyPIM 1B Series; SVHC:No SVHC (27-Jun-2018).

IGBT, MODULE, N-CH, 1.2KV, 100A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:515W; Collector Em; Available until stocks are exhausted

Infineon Fp100R12Kt4B11Bosa1.

TRANSISTOR, RF, AEC-Q101, NPN, TSLP3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:9V; Transition Frequency ft:14GHz; Power Dissipation Pd:210mW; DC Collector Current:35mA; DC Current Gain hFE:90hFE; RF Transistor Case:TSLP; No.

Infineon Bfr360L3E6765Xtma1 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

TRANSISTOR, RF, AEC-Q101, NPN, TSFP3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:580mW; DC Collector Current:80mA; DC Current Gain hFE:70hFE; RF Transistor Case:TSFP; No.

Infineon Bfr193Fh6327Xtsa1 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

TRANSISTOR, RF, AEC-Q101, NPN, TSLP3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:9V; Transition Frequency ft:14GHz; Power Dissipation Pd:210mW; DC Collector Current:35mA; DC Current Gain hFE:90hFE; RF Transistor Case:TSLP; No.

Infineon Bfr360L3E6765Xtma1 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

TRANSISTOR, RF, AEC-Q101, NPN, TSFP3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:580mW; DC Collector Current:80mA; DC Current Gain hFE:70hFE; RF Transistor Case:TSFP; No.

Infineon Bfr193Fh6327Xtsa1 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).