IGBT, MODULE, N-CH, 1.2KV, 39A; Transistor Polarity:N Channel; DC Collector Current:39A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:175W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:EasyPIM 2B Series; SVHC:No SVHC (27-Jun-2018)
Semiconductors - Discretes
Infineon Fp25R12W2T4B11Boma1
Specifications of Infineon Fp25R12W2T4B11Boma1 | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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