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INFINEON

Infineon Fp75R12Kt4B11Bosa1

About The 85V; Power Dissipation Pd:385W; Collector Emit; Available until stocks are exhausted.IGBT, MODULE, N-CH, 1

IGBT, MODULE, N-CH, 1.2KV, 75A; Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:385W; Collector Emit; Available until stocks are exhausted

Semiconductors - Discretes

Infineon Fp75R12Kt4B11Bosa1

Semiconductors - Discretes

Specifications of Infineon Fp75R12Kt4B11Bosa1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Fp75R12Kt4B11Bosa1
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MOSFET RELAY, SPST-NO, 60V, 1A, SMD; Contact Configuration:SPST-NO; Load Current:1A; Relay Terminals:SMD; Load Voltage Max:60V; On State Resistance Max:0.5ohm; Isolation Voltage:4kV; Forward Current If:25mA; Product Rang
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    • MOSFET RELAY, SPST-NO, 0.15A, 300V; Contact Configuration:SPST-NO; Load Current:150mA; Relay Terminals:Through Hole; Load Voltage Max:300V; On State Resistance Max:24ohm; Isolation V; Available until stocks are exhausted
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    • MOSFET RELAY, SPST-NO, 0.375A, 100V, SMD; Contact Configuration:SPST-NO; Load Current:375mA; Relay Terminals:SMD; Load Voltage Max:100V; On State Resistance Max:5ohm; Isolation Voltage:4kV; Forward Current If:25mA; Product Range:HEXFET PVA13 Series; SVHC:No SVHC (27-Jun-2018)
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    • IGBT, MODULE, N-CH, 650V, 150A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:355W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No.
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  • INFINEON
    • IGBT, MODULE, N-CH, 1.2KV, 450A; Transistor Polarity:N Channel; DC Collector Current:450A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No.
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    • IGBT, MODULE, N-CH, 600V, 34A; Transistor Polarity:N Channel; DC Collector Current:34A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:88W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:Module; No.
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    • IGBT, MODULE, N-CH, 1.2KV, 75A; Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:385W; Collector Emit; Available until stocks are exhausted
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  • INFINEON
    • IGBT, MODULE, N-CH, 1.2KV, 54A; Transistor Polarity:N Channel; DC Collector Current:54A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:215W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No.
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  • INFINEON
    • IGBT, MODULE, N-CH, 1.2KV, 75A; Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:385W; Collector Emit; Available until stocks are exhausted
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  • INFINEON
    • IGBT, MODULE, N-CH, 1.2KV, 54A; Transistor Polarity:N Channel; DC Collector Current:54A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:215W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No.
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  • INFINEON