IGBT, MODULE, N-CH, 650V, 150A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:355W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:125°C; Product Range:EconoPACK 3 Series; SVHC:No SVHC (27-Jun-2018)
Semiconductors - Discretes
Infineon Fs75R12Ke3Gbosa1
Specifications of Infineon Fs75R12Ke3Gbosa1 | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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